Surface potential measurements of vacuum ultraviolet irradiated Al2O3, Si3N4, and SiO2

被引：12
|
作者：
Lauer, JL [1 ]
Shohet, JL
机构：
[1] Univ Wisconsin, Plasma Proc & Technol Lab, Madison, WI 53706 USA
[2] Univ Wisconsin, Dept Elect & Comp Engn, Madison, WI 53706 USA
来源：
IEEE TRANSACTIONS ON PLASMA SCIENCE | 2005年 / 33卷 / 02期
基金：
美国国家科学基金会;
关键词：
plasma damage; plasma radiation; vacuum ultraviolet radiation (VUV);
D O I：
10.1109/TPS.2005.845307
中图分类号：
O35 [流体力学]; O53 [等离子体物理学];
学科分类号：
070204 ; 080103 ; 080704 ;
摘要：
Vacuum ultraviolet radiation (VUV), generated during plasma processing of semiconductors devices can induce charge on dielectric materials. By exposing dielectric coated wafers to synchrotron radiation of varying energy, it is possible to separate the photoemission and photoconductive effects, both of which result in an increase in the surface potential of the dielectric. Maps of the surface potential induced on the dielectrics by VUV can be obtained by the use of a Kelvin probe.
引用
收藏
页码：248 / 249
页数：2
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