Improving threshold-voltage uniformity of 0.1μm InP-based MODFETs with different gate layouts

被引：6

作者：

Xu, D ^{[1
]}

Enoki, T ^{[1
]}

Suemitsu, T ^{[1
]}

Umeda, Y ^{[1
]}

Yamane, Y ^{[1
]}

Ishii, Y ^{[1
]}

机构：

[1] NTT Corp, Syst Elect Labs, Kanagawa 2430198, Japan

来源：

ELECTRONICS LETTERS | 1998年 / 34卷 / 16期

关键词：

D O I：

10.1049/el:19981118

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

It is shown that the threshold-voltage uniformity of 0.1 mu m InAlAs/InGaAs-based modulation-doped field-effect transistors with different numbers of gate fingers and different gate widths can be improved when a thin cap-layer structure is employed. This improvement is based on the reduction of the recess time. This reduction suppresses the difference in etching that results from the different etching rates caused by the different electrochemical effects that occur because of the varied gate layouts.

引用

页码：1614 / 1615

页数：2

共 28 条

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[9] Sub-1 V band-gap based and MOS threshold-voltage based voltage references in 0.13 Aμm CMOS
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[10] Sub-1 V band-gap based and MOS threshold-voltage based voltage references in 0.13 µm CMOS
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