Improving threshold-voltage uniformity of 0.1μm InP-based MODFETs with different gate layouts

被引：6

作者：

Xu, D ^{[1
]}

Enoki, T ^{[1
]}

Suemitsu, T ^{[1
]}

Umeda, Y ^{[1
]}

Yamane, Y ^{[1
]}

Ishii, Y ^{[1
]}

机构：

[1] NTT Corp, Syst Elect Labs, Kanagawa 2430198, Japan

来源：

ELECTRONICS LETTERS | 1998年 / 34卷 / 16期

关键词：

D O I：

10.1049/el:19981118

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

It is shown that the threshold-voltage uniformity of 0.1 mu m InAlAs/InGaAs-based modulation-doped field-effect transistors with different numbers of gate fingers and different gate widths can be improved when a thin cap-layer structure is employed. This improvement is based on the reduction of the recess time. This reduction suppresses the difference in etching that results from the different etching rates caused by the different electrochemical effects that occur because of the varied gate layouts.

引用

页码：1614 / 1615

页数：2

共 28 条

[21] 0.15-μm T-gate In0.52Al0.48As/In0.53Ga0.47As InP-based HEMT with fmax of 390 GHz
Zhong Ying-Hui
Zhang Yu-Ming
Zhang Yi-Men
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Liu Xin-Yu
Jin Zhi
CHINESE PHYSICS B, 2013, 22 (12)
[22] Effects of non-uniform charge injection on gain, threshold current, and linewidth enhancement factor for a 1.55 μm InP-based multiple quantum well laser
Jambunathan, R.
Singh, J.
Journal of Applied Physics, 1996, 80 (12):
[23] Study on the dominant mechanisms for the temperature sensitivity of threshold current in 1.3-mu m InP-based strained-layer quantum-well lasers
Seki, S
Oohashi, H
Sugiura, H
Hirono, T
Yokoyama, K
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1996, 32 (08) : 1478 - 1486
[24] Effects of non-uniform charge injection on gain, threshold current, and linewidth enhancement factor for a 1.55 mu m InP-based multiple quantum well laser
Jambunathan, R
Singh, J
JOURNAL OF APPLIED PHYSICS, 1996, 80 (12) : 6875 - 6879
[25] Threshold voltage shift in 0.1 μm self-aligned-gate GaAs MESFETs under bias stress and related degradation of ultra-high-speed digital ICs
Fukai, YK
Yamasaki, K
Nishimura, K
1999 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 37TH ANNUAL, 1999, : 116 - 120
[26] Threshold voltage shift in 0.1 μm self-aligned-gate GaAs MESFETs under bias stress and related degradation of ultra-high-speed digital ICs
NTT Photonics Laboratories, 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan
不详
Microelectron. Reliab., 12 (1787-1792):
[27] Threshold voltage shift in 0.1 μm self-aligned-gate GaAs MESFETs under bias stress and related degradation of ultra-high-speed digital ICs
Fukai, YK
Yamasaki, K
Nishimura, K
MICROELECTRONICS RELIABILITY, 1999, 39 (12) : 1787 - 1792
[28] Threshold voltage shift in 0.1 μm self-aligned-gate GaAs MESFETs under bias stress and related degradation of ultra-high-speed digital ICs
NTT System Electronics Lab, Kanagawa, Japan
Annu Proc Reliab Phys Symp, (116-120):

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