Electroluminescence of flip-chip-bonded InP-based HEMTs with 0.1-μm gate

被引：0

作者：

Shigekawa, N ^{[1
]}

Furuta, T ^{[1
]}

Kodama, S ^{[1
]}

Suemitsu, T ^{[1
]}

Umeda, Y ^{[1
]}

机构：

[1] NTT Corp, Syst Elect Labs, Atsugi, Kanagawa 2430198, Japan

来源：

COMPOUND SEMICONDUCTORS 1998 | 1999年 / 162期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Measurement of electroluminescence (EL) due to the recombination in the channel is reported for flip-chip-bonded InP-based HEMTs. The features of the spectrum and the drain-bias-voltage dependence of the intensity agree with those obtained in previous works. The EL signal from each of two neighbouring HEMTs separated by 20 mum is clearly resolved in the spatial distribution measurement. Explanation for the large spread of the EL signal along the source-to-drain direction is also given. These results suggest that the present method is applicable for characterisation of both discrete HEMTs and individual devices in actual ICs.

引用

页码：865 / 870

页数：6

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