Broad tunability of emission wavelength by strain coupled InAs/GaAs1 - xSbx quantum dot heterostructures

被引：6
|
作者：
Saha, Jhuma [1 ]
Das, Debabrata [2 ]
Panda, Debiprasad [2 ]
Tongbram, Binita [1 ]
Chatterjee, Arka [3 ]
Liang, Baolai [4 ]
Das Gupta, Kantimay [5 ]
Pal, Samir Kumar [3 ]
Chakrabarti, Subhananda [2 ]
机构：
[1] Indian Inst Technol, Ctr Res Nanotechnol & Sci, Mumbai 400076, Maharashtra, India
[2] Indian Inst Technol, Dept Elect Engn, Mumbai 400076, Maharashtra, India
[3] SN Bose Natl Ctr Basic Sci, Kolkata 700106, India
[4] Univ Calif Los Angeles, Calif NanoSyst Inst, Los Angeles, CA 90095 USA
[5] Indian Inst Technol, Dept Phys, Mumbai 400076, Maharashtra, India
来源：
JOURNAL OF APPLIED PHYSICS | 2019年 / 126卷 / 15期
关键词：
INFRARED PHOTODETECTORS; LASERS; ENERGY;
D O I：
10.1063/1.5108949
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Tuning of the photoluminescence emission over a wider range of optical telecommunication wavelength (1.38 mu m-1.68 mu m) has been achieved by employing a GaAs1 - Sb-x(x) capping layer to the strain coupled bilayer InAs quantum dot (QD) heterostructures. It is shown that the modulation of strain between the two dot layers through variation in Sb-content and thickness of the capping layer strongly influence the dot size. The band alignment transformation from type-I to type-II is observed for high Sb-content in the capping layers. In addition, the carrier lifetime is improved by a factor of three in the QD heterostructures having type-II band alignment. This, we believe, is of importance for optoelectronic device applications. Published under license by AIP Publishing.
引用
收藏
页数：8
相关论文
共 50 条
  • [21] Temperature-dependent modulated reflectance and photoluminescence of InAs–GaAs and InAs–InGaAs–GaAs quantum dot heterostructures
    Andrius Rimkus
    Evelina Pozingytė
    Ramūnas Nedzinskas
    Bronislovas Čechavičius
    Julius Kavaliauskas
    Gintaras Valušis
    Lianhe Li
    Edmund H. Linfield
    Optical and Quantum Electronics, 2016, 48
  • [22] Highly Efficient Wavelength Conversion in InAs/GaAs Quantum Dot Lasers
    Huang, H.
    Schires, K.
    Raghunathan, R.
    Erasme, D.
    Arsenijevic, D.
    Sandeev, T.
    Bimberg, D.
    Grillot, F.
    2015 PHOTONICS CONFERENCE (IPC), 2015,
  • [23] Impact of Sb Composition on Strain Profile of GaAs1-xSbx Capped InAs Quantum Dots
    Krishna, Jhuma Saha
    Panda, Debiprasad
    Chakrabarti, Subhananda
    IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2019, 18 : 234 - 239
  • [24] Investigation of local photocurrent spectra in InAs/GaAs quantum dot and quantum well heterostructures
    Aleshkin, VY
    Biryukov, AV
    Gaponov, SV
    Danil'tsev, VM
    Mironov, VL
    Murel, AV
    Shashkin, VI
    SMART OPTICAL INORGANIC STRUCTURES AND DEVICES, 2001, 4318 : 22 - 25
  • [25] Strain relaxation in low-mismatched GaAs/GaAs1-xSbx/GaAs heterostructures
    Gangopadhyay, Abhinandan
    Maros, Aymeric
    Faleev, Nikolai
    Smith, David J.
    ACTA MATERIALIA, 2019, 162 : 103 - 115
  • [26] Methods of controlling the emission wavelength in InAs/GaAsN/InGaAsN heterostructures on GaAs substrates
    V. V. Mamutin
    A. Yu. Egorov
    N. V. Kryzhanovskaya
    V. S. Mikhrin
    A. M. Nadtochy
    E. V. Pirogov
    Semiconductors, 2008, 42 : 805 - 812
  • [27] Methods of controlling the emission wavelength in InAs/GaAsN/InGaAsN heterostructures on GaAs substrates
    Mamutin, V. V.
    Egorov, A. Yu.
    Kryzhanovskaya, N. V.
    Mikhrin, V. S.
    Nadtochy, A. M.
    Pirogov, E. V.
    SEMICONDUCTORS, 2008, 42 (07) : 805 - 812
  • [28] Light emission and spin-polarised hole injection in InAs/GaAs quantum dot heterostructures with Schottky contact
    Baidus, N. V.
    Vasilevskiy, M. I.
    Khazanova, S. V.
    Zvonkov, B. N.
    van der Meulen, H. P.
    Calleja, J. M.
    Vina, L.
    EPL, 2012, 98 (02)
  • [29] Temperature and excitation dependence of photoluminescence spectra of InAs/GaAs quantum dot heterostructures
    Nee, Tzer-En
    Wu, Ya-Fen
    Lee, Jiunn-Chyi
    Wang, Jen-Cheng
    IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2007, 6 (05) : 492 - 496
  • [30] Photoelectric spectroscopy of InAs/GaAs quantum dot heterostructures in semiconductor/electrolyte system
    Karpovich, IA
    Levichev, SB
    Morozov, SV
    Zvonkov, BN
    Filatov, DO
    Gorshkov, AP
    Ermakov, SY
    IZVESTIYA AKADEMII NAUK SERIYA FIZICHESKAYA, 2002, 66 (02): : 187 - 189
12345