Broad tunability of emission wavelength by strain coupled InAs/GaAs1 - xSbx quantum dot heterostructures

被引：6
|
作者：
Saha, Jhuma [1 ]
Das, Debabrata [2 ]
Panda, Debiprasad [2 ]
Tongbram, Binita [1 ]
Chatterjee, Arka [3 ]
Liang, Baolai [4 ]
Das Gupta, Kantimay [5 ]
Pal, Samir Kumar [3 ]
Chakrabarti, Subhananda [2 ]
机构：
[1] Indian Inst Technol, Ctr Res Nanotechnol & Sci, Mumbai 400076, Maharashtra, India
[2] Indian Inst Technol, Dept Elect Engn, Mumbai 400076, Maharashtra, India
[3] SN Bose Natl Ctr Basic Sci, Kolkata 700106, India
[4] Univ Calif Los Angeles, Calif NanoSyst Inst, Los Angeles, CA 90095 USA
[5] Indian Inst Technol, Dept Phys, Mumbai 400076, Maharashtra, India
来源：
JOURNAL OF APPLIED PHYSICS | 2019年 / 126卷 / 15期
关键词：
INFRARED PHOTODETECTORS; LASERS; ENERGY;
D O I：
10.1063/1.5108949
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Tuning of the photoluminescence emission over a wider range of optical telecommunication wavelength (1.38 mu m-1.68 mu m) has been achieved by employing a GaAs1 - Sb-x(x) capping layer to the strain coupled bilayer InAs quantum dot (QD) heterostructures. It is shown that the modulation of strain between the two dot layers through variation in Sb-content and thickness of the capping layer strongly influence the dot size. The band alignment transformation from type-I to type-II is observed for high Sb-content in the capping layers. In addition, the carrier lifetime is improved by a factor of three in the QD heterostructures having type-II band alignment. This, we believe, is of importance for optoelectronic device applications. Published under license by AIP Publishing.
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页数：8
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