X-BAND CMOS POWER AMPLIFIER USING MODE-LOCKING METHOD FOR SENSOR APPLICATIONS

被引：14

作者：

Lee, C. ^{[1
]}

Park, J. ^{[1
]}

Park, C. ^{[1
]}

机构：

[1] Soongsil Univ, Sch Elect Engn, Coll Informat Technol, Seoul 156743, South Korea

来源：

JOURNAL OF ELECTROMAGNETIC WAVES AND APPLICATIONS | 2012年 / 26卷 / 5-6期

基金：

新加坡国家研究基金会;

关键词：

DISTRIBUTED ACTIVE-TRANSFORMER; 1.9-GHZ; DESIGN; NOISE;

D O I：

10.1080/09205071.2012.710783

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An X-band CMOS power amplifier using a mode-locking method for sensor applications is designed with a TSMC 0.13-mu m RF CMOS process. The cascode structure is adapted to remove the reliability problems between the drain and gate voltages of the NMOS. Additionally, the mode-locking method is used to improve the efficiency and gain of the amplifier. We proposed the method to adapt the mode-locking topology to the cascode structure. The measured power added efficiency is 27%, while the saturated output power is 14 dBm at an operation frequency of 8.9GHz. The designed chip size is 700 by 550 mu m(2).

引用

页码：633 / 640

页数：8

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