Cross-talk characterization of dense single-photon avalanche diode arrays in CMOS 150-nm technology

被引：9
|
作者：
Xu, Hesong [1 ,2 ]
Pancheri, Lucio [2 ]
Braga, Leo H. C. [1 ]
Dalla Betta, Gian-Franco [2 ]
Stoppa, David [1 ,2 ]
机构：
[1] Fdn Bruno Kessler, Integrated Radiat & Image Sensors Div, Via Sommar 18, I-38123 Trento, Italy
[2] Univ Trento, Dept Ind Engn, Via Sommar 5, I-38123 Trento, Italy
来源：
OPTICAL ENGINEERING | 2016年 / 55卷 / 06期
关键词：
single-photon avalanche diode; cross talk; CMOS; PHOTODIODES;
D O I：
10.1117/1.OE.55.6.067102
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Cross-talk characterization results of high-fill-factor single-photon avalanche diode (SPAD) arrays in CMOS 150-nm technology are reported and discussed. Three different SPAD structures were designed with two different sizes (15.6 and 25.6 mu m pitch) and three guard ring widths (0.6, 1.1, and 1.6 mu m). Each SPAD was implemented in an array, composed of 25 (5 x 5) devices, which can be separately activated. Measurement results show that the average cross-talk probability is well below 1% for the shallow-junction SPAD structure with 15.6 mu m pitch and 39.9% fill factor, and 1.45% for the structure with 25.6 mu m pitch and 60.6% fill factor. An increase of cross-talk probability with the excess bias voltage is observed. (C) 2016 Society of Photo-Optical Instrumentation Engineers (SPIE)
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页数：5
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