Cross-talk characterization of dense single-photon avalanche diode arrays in CMOS 150-nm technology

Cross-talk characterization results of high-fill-factor single-photon avalanche diode (SPAD) arrays in CMOS 150-nm technology are reported and discussed. Three different SPAD structures were designed with two different sizes (15.6 and 25.6 mu m pitch) and three guard ring widths (0.6, 1.1, and 1.6 mu m). Each SPAD was implemented in an array, composed of 25 (5 x 5) devices, which can be separately activated. Measurement results show that the average cross-talk probability is well below 1% for the shallow-junction SPAD structure with 15.6 mu m pitch and 39.9% fill factor, and 1.45% for the structure with 25.6 mu m pitch and 60.6% fill factor. An increase of cross-talk probability with the excess bias voltage is observed. (C) 2016 Society of Photo-Optical Instrumentation Engineers (SPIE)