Thermal annealing and temperature dependences of memory effect in organic memory transistor

被引:17
|
作者
Ren, X. C. [1 ]
Wang, S. M. [1 ]
Leung, C. W. [2 ]
Yan, F. [2 ]
Chan, P. K. L. [1 ]
机构
[1] Hong Kong Polytech Univ, Dept Mech Engn, Hong Kong, Peoples R China
[2] Hong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Peoples R China
关键词
D O I
10.1063/1.3617477
中图分类号
O59 [应用物理学];
学科分类号
摘要
We investigate the annealing and thermal effects of organic non-volatile memory with floating silver nanoparticles by real-time transfer curve measurements. During annealing, the memory window shows shrinkage of 23% due to structural variation of the nanoparticles. However, by increasing the device operating temperature from 20 to 90 degrees C after annealing, the memory window demonstrates an enlargement up to 100%. The differences in the thermal responses are explained and confirmed by the co-existence of electron and hole traps. Our findings provide a better understanding of organic memory performances under various operating temperatures and validate their applications for temperature sensing or thermal memories. (C) 2011 American Institute of Physics. [doi:10.1063/1.3617477]
引用
收藏
页数:3
相关论文
共 50 条
  • [31] Graphene oxide nanosheets based organic field effect transistor for nonvolatile memory applications
    Kim, Tae-Wook
    Gao, Yan
    Acton, Orb
    Yip, Hin-Lap
    Ma, Hong
    Chen, Hongzheng
    Jen, Alex K. -Y.
    APPLIED PHYSICS LETTERS, 2010, 97 (02)
  • [32] An organic field effect transistor memory adopting octadecyltrichlorosilane self-assembled monolayer
    Zhang, Peng
    Guo, Yun
    Cao, Keyang
    Yi, Mingdong
    Huang, Liya
    Shi, Wei
    Zhu, Jintao
    Huang, Wei
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2021, 54 (09)
  • [33] EFFECT OF A MAGNETIC-FIELD, TEMPERATURE AND ANNEALING ON THE LASTING MEMORY IN FERRITE POWDERS
    SHUTILOV, VA
    CHARNAYA, EV
    KOTOV, LN
    KULESHOV, AA
    SARNATSKII, VM
    PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1986, 12 (17): : 1060 - 1063
  • [34] Temperature memory effect of stress annealing-induced anisotropy in metallic glasses
    Kozikowski, Pawel
    Ohnuma, Masato
    Hashimoto, Ryuichi
    Takano, Kodai
    Herzer, Giselher
    Kuhnt, Markus
    Polak, Christian
    PHYSICAL REVIEW MATERIALS, 2020, 4 (09):
  • [35] Effect of Rolling Temperature and Annealing on Grain Refinement in TiNiCu Shape Memory Alloys
    Varukuti, Shashi Mohan Rao
    Kumar, K. N. Chaithanya
    Suresh, K. S.
    JOURNAL OF MATERIALS ENGINEERING AND PERFORMANCE, 2024, 33 (22) : 12362 - 12374
  • [36] Thermal Annealing for High Performance and Memory Behavior in n-Type Organic Electrochemical Transistors
    Castillo, Tania Cecilia Hidalgo
    Shan, Wentao
    Ma, Guorong
    Zhao, Haoyu
    Wang, Yunfei
    Druet, Victor
    Saleh, Abdulelah
    Gu, Xiaodan
    Inal, Sahika
    ADVANCED MATERIALS, 2025, 37 (05)
  • [37] Temperature memory effect in amorphous shape memory polymers
    Yu, Kai
    Qi, H. Jerry
    SOFT MATTER, 2014, 10 (47) : 9423 - 9432
  • [38] Review on the temperature memory effect in shape memory alloys
    Wanga, Zhiguo
    Zua, Xiaotao
    Fub, Yongquing
    INTERNATIONAL JOURNAL OF SMART AND NANO MATERIALS, 2011, 2 (03) : 101 - 119
  • [39] Memory Polynomial with Shaped Memory Delay Profile and Modeling the Thermal Memory Effect
    Yuzer, A. H.
    Bassam, S. A.
    Ghannouchi, F. M.
    Demir, S.
    2013 IEEE 20TH INTERNATIONAL CONFERENCE ON ELECTRONICS, CIRCUITS, AND SYSTEMS (ICECS), 2013, : 585 - 588
  • [40] A pentacene-based organic thin film memory transistor
    Mabrook, Mohammed F.
    Yun, Youngjun
    Pearson, Christopher
    Zeze, Dagou A.
    Petty, Michael C.
    APPLIED PHYSICS LETTERS, 2009, 94 (17)