Thermal annealing and temperature dependences of memory effect in organic memory transistor

被引:17
|
作者
Ren, X. C. [1 ]
Wang, S. M. [1 ]
Leung, C. W. [2 ]
Yan, F. [2 ]
Chan, P. K. L. [1 ]
机构
[1] Hong Kong Polytech Univ, Dept Mech Engn, Hong Kong, Peoples R China
[2] Hong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Peoples R China
关键词
D O I
10.1063/1.3617477
中图分类号
O59 [应用物理学];
学科分类号
摘要
We investigate the annealing and thermal effects of organic non-volatile memory with floating silver nanoparticles by real-time transfer curve measurements. During annealing, the memory window shows shrinkage of 23% due to structural variation of the nanoparticles. However, by increasing the device operating temperature from 20 to 90 degrees C after annealing, the memory window demonstrates an enlargement up to 100%. The differences in the thermal responses are explained and confirmed by the co-existence of electron and hole traps. Our findings provide a better understanding of organic memory performances under various operating temperatures and validate their applications for temperature sensing or thermal memories. (C) 2011 American Institute of Physics. [doi:10.1063/1.3617477]
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页数:3
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