Cathodoluminescence Characteristics of Linearly-Shaped Staggered InGaN Quantum Wells Light-Emitting Diodes

被引：0
|
作者：
Zhao, Hongping [1 ]
Zhang, Jing [1 ]
Liu, Guangyu [1 ]
Toma, Takahiro [1 ]
Poplawsky, Jonathan D.
Dierolf, Volkmar
Tansu, Nelson [1 ]
机构：
[1] Lehigh Univ, Dept Elect & Comp Engn, Ctr Opt Technol, Bethlehem, PA 18015 USA
来源：
GALLIUM NITRIDE MATERIALS AND DEVICES VI | 2011年 / 7939卷
关键词：
0.77 EV INN; LASER-DIODES; MOVPE; NM; GAN/SAPPHIRE; EFFICIENCY; OPERATION; SAPPHIRE;
D O I：
10.1117/12.875002
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Metalorganic chemical vapor deposition (MOCVD) growths of linearly-shaped staggered InGaN quantum wells light-emitting diodes are performed. The use of linearly-shaped staggered InGaN QWs leads to the shift of both electron and hole wavefunction toward the center of the quantum well region with enhanced momentum matrix element, which results in the enhancement of the spontaneous radiaitve recombination rate. The power-density-dependent cathodoluminescence measurements for both conventional and linearly-shaped staggered InGaN QW show 2.5-3.5 times increase in the integrated cathodoluminescence intensity by using the novel active region.
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页数：6
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