Investigation of amber light-emitting diodes based on InGaN/AlN/AlGaN quantum wells

被引：7
|
作者：
Iida, Daisuke [1 ]
Lu, Shen [1 ]
Hirahara, Sota [1 ]
Niwa, Kazumasa [2 ]
Kamiyama, Satoshi [2 ]
Ohkawa, Kazuhiro [1 ]
机构：
[1] Tokyo Univ Sci, Dept Appl Phys, Tokyo 1258585, Japan
[2] Meijo Univ, Fac Sci & Technol, Nagoya, Aichi 4688502, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2016年 / 55卷 / 05期
关键词：
MG-DOPED GAN; BUFFER LAYER; INGAN; EMISSION; GROWTH; GAINN; FILMS;
D O I：
10.7567/JJAP.55.05FJ06
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We investigated InGaN-based amber light-emitting diodes (LEDs) with AlN/(Al)GaN barrier layers grown by metalorganic vapor-phase epitaxy. Tensilely strained AlN/Al0.03Ga0.97N barriers improved the crystalline quality of compressively strained InGaN quantum wells. We found that strain compensation among wells and barriers improves the external quantum efficiency of high-In-content InGaN-based amber LEDs. The amber LEDs with AlN/Al0.03Ga0.97N barriers have shown an electroluminescence (EL) intensity approximately 2.5-fold that of LEDs with the AlN/GaN barriers at 20 mA. (C) 2016 The Japan Society of Applied Physics
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页数：4
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