Characterization and modelling of power RF LDMOS transistor including self-heating effects

被引：0

作者：

Belaid, MA ^{[1
]}

Maanane, H ^{[1
]}

Mourgues, K ^{[1
]}

Masmoudi, M ^{[1
]}

Ketata, K ^{[1
]}

Marcon, J ^{[1
]}

机构：

[1] Univ Rouen, IUT Rouen, LEMI, F-76821 Mont St Aignan, France

来源：

16TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, PROCEEDINGS | 2004年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we propose a new electro-thermal model of power RF LDMOS transistor implemented in Agilent's ADS, using Symbolic Defined Device (SDD). The proposed model takes into account the thermal effects and influence of temperature on the I-V characteristics, by providing three thermal capacitances and three thermal resistances, which represent the heat flow from the chip to the ambient air (thermal network). It allows us to study temperature dependent shifts for some macroscopic parameters such as the threshold voltage (V-t), the transconductance (g(m)), the conductance (g(d)) and the on-state resistance (Rds-on).

引用

页码：262 / 265

页数：4

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