Accurate RF large-signal model of LDMOSFETs including self-heating effect

被引：0

作者：

Yang, Y ^{[1
]}

Yi, J ^{[1
]}

Kim, B ^{[1
]}

机构：

[1] Pohang Univ Sci & Technol, Microwave Applicat Res Ctr, Dept Elect & Elect Engn, Pohang 790784, Kyungbuk, South Korea

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2001年 / 49卷 / 02期

关键词：

empirical channel current model; large-signal model; LDMOS; self-heating effect;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we present a new silicon RF LDMOSFET large-signal model including a self-heating effect. A new empirical channel current model suited for accurately predicting intermodulation distortion is employed. The proposed channel current model can represent transconductance (gm) saturation and rolloff in the continuous manner. It has continuous higher order derivatives for accurate prediction of nonlinear microwave circuit behavior, such as power amplifiers, microwave mixers, oscillators, etc. Using the complete large-signal model, we have designed and implemented a 1.2-GHz power amplifier. The measured and simulated amplifier characteristics, especially the intermodulation and harmonic behaviors, are in good agreement.

引用

页码：387 / 390

页数：4

共 50 条

[1] AN ACCURATE LARGE-SIGNAL MODEL FOR RF SOI LDMOS INCLUDING SELF-HEATING EFFECT
Wang, Huang
Sun, Lingling
Yu, Zhiping
Liu, Jun
[J]. CIICT 2008: PROCEEDINGS OF CHINA-IRELAND INTERNATIONAL CONFERENCE ON INFORMATION AND COMMUNICATIONS TECHNOLOGIES 2008, 2008, : 225 - +
[2] Accurate Large-Signal Modeling ofAlGaN-GaN HEMT Including Trapping and Self-Heating Induced Dispersion
Jarndal, Anwar
Bunz, Bernd
Kompa, Guenter
[J]. PROCEEDINGS OF THE 18TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 2006, : 97 - +
[3] A large-signal SOI MOSFET model including dynamic self-heating based on small-signal model parameters
Caviglia, AL
Iliadis, AA
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (04) : 762 - 768
[4] An Empirical Large-Signal Model for SiC MESFETs With Self-Heating Thermal Model
Yuk, Kelvin S.
Branner, George R.
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2008, 56 (11) : 2671 - 2680
[5] A physical large-signal model for GaN HEMTS including self-heating and trap-related dispersion
Mari, D.
Bernardoni, M.
Sozzi, G.
Menozzi, R.
Umana-Membreno, G. A.
Nener, B. D.
[J]. MICROELECTRONICS RELIABILITY, 2011, 51 (02) : 229 - 234
[6] An accurate large-signal model of GaAs MESFET which accounts for charge conservation, dispersion, and self-heating
Wei, CJ
Tkachenko, YA
Bartle, D
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1998, 46 (11) : 1638 - 1644
[7] Novel extraction method including self-heating and ambient temperature effects for a large-signal model of a HBT
Park, HM
Koh, K
Hong, S
[J]. JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2002, 41 (06) : 1025 - 1035
[8] Large-signal modeling of self-heating and RF-breakdown effects in power HBTs
Wei, CJ
Hwang, JCM
Ho, WJ
Higgins, JA
[J]. 1996 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3, 1996, : 1751 - 1754
[9] LARGE-SIGNAL MODELING OF HBTS INCLUDING SELF-HEATING AND TRANSIT-TIME EFFECTS
GROSSMAN, PC
CHOMA, J
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1992, 40 (03) : 449 - 464
[10] A parameter extraction method for GaN HEMT empirical large-signal model including self-heating and trapping effects
Wen, Zhang
Xu, Yuehang
Wang, Changsi
Zhao, Xiaodong
Chen, Zhikai
Xu, Ruimin
[J]. INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS, 2017, 30 (01)

← 1 2 3 4 5 →