LARGE-SIGNAL MODELING OF HBTS INCLUDING SELF-HEATING AND TRANSIT-TIME EFFECTS

被引：62
|
作者：
GROSSMAN, PC [1 ]
CHOMA, J [1 ]
机构：
[1] UNIV SO CALIF,DEPT ELECT ENGN ELECTROPHYS,LOS ANGELES,CA 90089
来源：
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1992年 / 40卷 / 03期
关键词：
HETEROJUNCTION; MODEL; TIME; CIRCUIT; CAPACITANCE; BIPOLAR; HBT; CHARGE; THERMAL; RECOMBINATION; TRANSISTOR; TRANSIT; SPICE; JUNCTION; ELECTROLUMINESCENCE;
D O I：
10.1109/22.121720
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A physically based, large signal HBT model is presented to account for the time dependence of the base, collector, and emitter charging currents, as well as self heating effects. The model tracks device performance over eight decades of current. As such, the model can be used as the basis of SPICE modeling approximations, and to this end, examples are presented. A thesis for the divergence of high frequency large signal SPICE simulations from measured data is formulated, inclusive of a requisite empirical equation for the base-collector junction capacitance.
引用
收藏
页码：449 / 464
页数：16
相关论文
共 50 条
  • [1] Large-signal modeling of self-heating, collector transit-time, and RF-breakdown effects in power HBT's
    Wei, Ce-Jun
    Hwang, James C.M.
    Ho, Wu-Jing
    Higgins, J.Aiden
    [J]. IEEE Transactions on Microwave Theory and Techniques, 1996, 44 (12 /2): : 2641 - 2646
  • [2] Large-signal modeling of self-heating, collector transit-time, and RF-breakdown effects in power HBT's
    Wei, CJ
    Hwang, JCM
    Ho, WJ
    Higgins, JA
    [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1996, 44 (12) : 2641 - 2647
  • [3] Large-signal modeling of self-heating and RF-breakdown effects in power HBTs
    Wei, CJ
    Hwang, JCM
    Ho, WJ
    Higgins, JA
    [J]. 1996 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3, 1996, : 1751 - 1754
  • [4] LARGE-SIGNAL TRANSIT-TIME EFFECTS IN MOS TRANSISTOR
    BURNS, JR
    [J]. RCA REVIEW, 1969, 30 (01): : 15 - &
  • [5] Accurate RF large-signal model of LDMOSFETs including self-heating effect
    Yang, Y
    Yi, J
    Kim, B
    [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2001, 49 (02) : 387 - 390
  • [6] An Electrothermal Model for Empirical Large-Signal Modeling of AlGaN/GaN HEMTs Including Self-Heating and Ambient Temperature Effects
    Wang, Changsi
    Xu, Yuehang
    Yu, Xuming
    Ren, Chunjiang
    Wang, Zhensheng
    Lu, Haiyan
    Chen, Tangsheng
    Zhang, Bin
    Xu, Ruimin
    [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2014, 62 (12) : 2878 - 2887
  • [7] Novel extraction method including self-heating and ambient temperature effects for a large-signal model of a HBT
    Park, HM
    Koh, K
    Hong, S
    [J]. JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2002, 41 (06) : 1025 - 1035
  • [8] Accurate Large-Signal Modeling ofAlGaN-GaN HEMT Including Trapping and Self-Heating Induced Dispersion
    Jarndal, Anwar
    Bunz, Bernd
    Kompa, Guenter
    [J]. PROCEEDINGS OF THE 18TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 2006, : 97 - +
  • [9] AN ACCURATE LARGE-SIGNAL MODEL FOR RF SOI LDMOS INCLUDING SELF-HEATING EFFECT
    Wang, Huang
    Sun, Lingling
    Yu, Zhiping
    Liu, Jun
    [J]. CIICT 2008: PROCEEDINGS OF CHINA-IRELAND INTERNATIONAL CONFERENCE ON INFORMATION AND COMMUNICATIONS TECHNOLOGIES 2008, 2008, : 225 - +
  • [10] COLLECTOR SIGNAL DELAY TIME AND COLLECTOR TRANSIT-TIME OF HBTS INCLUDING VELOCITY OVERSHOOT
    LIOU, JJ
    SHAKOURI, H
    [J]. SOLID-STATE ELECTRONICS, 1992, 35 (01) : 15 - 19
12345