Performance of GAA Poly-Si Channel of Junctionless Field Effect Transistors with Ultra-Thin Body

被引：0
|
作者：
Liu, Yan-Bo [1 ]
Jhan, Yi-Ruei [1 ]
Wang, Cheng-Ping [1 ]
Wu, Yung-Chun [1 ]
机构：
[1] Natl Tsing Hua Univ, Dept Engn & Syst Sci, Hsinchu, Taiwan
来源：
2015 SILICON NANOELECTRONICS WORKSHOP (SNW) | 2015年
关键词：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Agate-all-around (GAA) with trench structure poly-Si channel junctionless Field-Effect Transistor (JL-FET) has been successfully demonstrated. This JL-FET shows excellent performance in a low drain-induced barrier lowering (DIBL), a steep Sub-threshold Swing (SS) similar to 70 mV/decade and high I-ON/I-OFF (> 10(8)) ratio.
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