Superconducting multilayer structures with a thick SiO2 dielectric interlayer for multichip modules

被引:0
|
作者
Zhang, GQ [1 ]
Yao, HJ [1 ]
Luo, WA [1 ]
Ang, SS [1 ]
Brown, WD [1 ]
Chan, FT [1 ]
Salamo, GJ [1 ]
机构
[1] Univ Arkansas, Dept Phys, Fayetteville, AR 72701 USA
关键词
multichip module; high temperature superconductor;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
One of the most promising applications for high temperature superconductors (HTSCs) is for use as signal interconnects between bare integrated circuits (ICs) in multichip modules (MCMs). For HTSC MCM and other related electronic applications, it is necessary to fabricate several YBa2Cu3O7-x (YBCO) layers separated by thick low dielectric layers. In this work, YBCO/yttrium stabilized zirconia (YSZ)/SiO2/YSZ/YBCO multilayer structures have been successfully deposited with patterned YBCO layers on single-crystal YSZ substrates. Reactive sputtering technique was used to grow SiO2 layer and ion beam assisted deposition (IBAD) method was used to form biaxially aligned YSZ layers. In contrast to previously reported work, the top YBCO layer did not show any cracking. Using this process, a novel two-layer test vehicle was fabricated. A clock distribution circuit was mounted on the superconducting test vehicle to form a ring oscillator. The functionality of the test vehicle was found to be about 100 MHz.
引用
收藏
页码:1023 / 1025
页数:3
相关论文
共 50 条
  • [41] ZnO nanocrystals/SiO2 multilayer structures fabricated by RF-magnetron sputtering
    Pankratov, V.
    Osinniy, V.
    Larsen, A. Nylandsted
    Nielsen, B. Bech
    PHYSICA B-CONDENSED MATTER, 2009, 404 (23-24) : 4827 - 4830
  • [42] DIELECTRIC DEGRADATION OF PT/SIO2/SI STRUCTURES DURING THERMAL ANNEALING
    TSUI, BY
    CHEN, MC
    SOLID-STATE ELECTRONICS, 1993, 36 (04) : 583 - 593
  • [43] Preparation and characterization of thick porous SiO2 film for multilayer pyroelectric thin film IR detector
    Li, L
    Zhang, LY
    Yao, X
    CERAMICS INTERNATIONAL, 2004, 30 (07) : 1843 - 1846
  • [44] Ferromagnetism in Ge/SiO2 multilayer films
    Zhen, Congmian
    Liu, Yuanbo
    Ma, Li
    Pang, Zhaoguang
    Pan, Chengfu
    Hou, Denglu
    JOURNAL OF APPLIED PHYSICS, 2010, 107 (04)
  • [45] Constant-current time dependent dielectric breakdown in thick amorphous SiO2 capacitors
    Giuliano, Federico
    Reggiani, Susanna
    Gnani, Elena
    Gnudi, Antonio
    Rossetti, Mattia
    Depetro, Riccardo
    Croce, Giuseppe
    2021 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS), 2021,
  • [46] Visible photoluminescence and quantum confinement effects in amorphous Si/SiO2 multilayer structures
    Nihonyanagi, S
    Nishimoto, K
    Kanemitsu, Y
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2002, 299 : 1095 - 1099
  • [47] Formation and characterization of Si/SiO2 multilayer structures by oxygen ion implantation into silicon
    Hatzopoulos, N
    Siapkas, DI
    Hemment, PLF
    Skorupa, W
    JOURNAL OF APPLIED PHYSICS, 1996, 80 (09) : 4960 - 4970
  • [48] Nanoscale Si/SiO2 Multilayer Structures Produced by Plasma-chemical Technology
    Gismatulin, Andrei A.
    Kamaev, Genadii N.
    Antonenko, Alexander Kh.
    Arzhannikova, Sofia A.
    Volodin, Vladimir A.
    Efremov, Mikhail D.
    Gileva, Anna S.
    2009 INTERNATIONAL SCHOOL AND SEMINAR ON MODERN PROBLEMS OF NANOELECTRONICS, MICRO- AND NANOSYSTEM TECHNOLOGIES, 2009, : 81 - +
  • [49] Analysis of temperature compensated SAW modes in ZnO/SiO2/Si multilayer structures
    Emanetoglu, NW
    Patounakis, G
    Muthukumar, S
    Lu, Y
    2000 IEEE ULTRASONICS SYMPOSIUM PROCEEDINGS, VOLS 1 AND 2, 2000, : 325 - 328
  • [50] Optoelectronic properties of Au/n-type Si semiconductor structures with SiO2 interlayer
    Seymen, Halil
    Berk, Niyazi
    Ozerli, Halil
    Karatas, Sukru
    PHYSICA B-CONDENSED MATTER, 2024, 685