Reversible phase transition between metastable structures of Si(111)c2x8 and 1x1 studied by high-temperature STM

被引：7

作者：

Chida, M ^{[1
]}

Minoda, H ^{[1
]}

Tanishiro, Y ^{[1
]}

Yagi, K ^{[1
]}

机构：

[1] Tokyo Inst Technol, Dept Phys, Meguro Ku, Tokyo 1528551, Japan

来源：

SURFACE SCIENCE | 1998年 / 411卷 / 1-2期

关键词：

adatoms; nucleation; scanning tunneling microscopy; silicon; surface diffusion; surface energy; surface structure; morphology; roughness and topography; surface thermodynamics;

D O I：

10.1016/S0039-6028(98)00398-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We studied metastable reconstructions on quenched Si(lll) surfaces by using high-temperature STM. It was found that the c2 x 8 is most stable in metastable reconstructions of 2 x 2, c2 x 4, c2 x 8 and root 3 x root 3 on the quenched Si(111) surface. The reversible phase transition between the c2 x 8 and 1 x 1 structures at about 230 degrees C was found on the surface, which is similar to that between the c2 x 8 and 1 x 1 structures on Ge(111) surfaces around 300 degrees C. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：L822 / L827

页数：6

共 50 条

[41] New phase and surface melting of Si(111) at high temperature above the (7 x 7)-(1 x 1) phase transition
Fukaya, Y
Shigeta, Y
PHYSICAL REVIEW LETTERS, 2000, 85 (24) : 5150 - 5153
[42] Atomic and electronic structures of the ordered 2√3x2√3 and molten 1x1 phase on the Si(111): Sn surface
Eriksson, P. E. J.
Osiecki, J. R.
Sakamoto, Kazuyuki
Uhrberg, R. I. G.
PHYSICAL REVIEW B, 2010, 81 (23):
[43] Electronic structures of Si(111) in the 7 x 7 ⇆ "1 x 1" phase transition studied by surface second-harmonic generation
Suzuki, T
Venkataramanan, V
Aono, M
APPLIED SURFACE SCIENCE, 2001, 169 : 206 - 211
[44] ORIENTATIONAL ORDERING OF C60 ADSORBED ON THE CU(111)1X1 SURFACE STUDIED BY THE FI-STM
HASHIZUME, T
MOTAI, K
WANG, XD
SHINOHARA, H
SAKURAI, T
SCIENCE REPORTS OF THE RESEARCH INSTITUTES TOHOKU UNIVERSITY SERIES A-PHYSICS CHEMISTRY AND METALLURGY, 1993, 39 (01): : 51 - 55
[45] C-60 ADSORPTION ON THE SI(100)2X1 AND CU(111)1X1 SURFACES
HASHIZUME, T
SAKURAI, T
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (03): : 1992 - 1999
[46] High-temperature scanning tunneling microscopy study of the '16 x 2'↔(1 x 1) phase transition on an Si(110) surface
Yamamoto, Y
Sueyoshi, T
Sato, T
Iwatsuki, M
SURFACE SCIENCE, 2000, 466 (1-3) : 183 - 188
[47] ADSORPTION AND DECOMPOSITION OF DIETHYLSILANE AND DIETHYLDICHLOROSILANE BY SI(100)(2X1) AND SI(111)(1X1)
SCHMIDT, J
STUHLMANN, C
IBACH, H
SURFACE SCIENCE, 1994, 302 (1-2) : 10 - 24
[48] Domain growth of Si(111)-5x2 Au by high-temperature STM
Hasegawa, T
Hosaka, S
Hosoki, S
SURFACE SCIENCE, 1996, 357 (1-3) : 858 - 862
[49] SURFACE AND BULK ELECTRONIC-STRUCTURE OF GE(111) C(2X8) AND GE(111)-AS 1X1
BRINGANS, RD
UHRBERG, RIG
BACHRACH, RZ
PHYSICAL REVIEW B, 1986, 34 (04): : 2373 - 2380
[50] THE CO-INDUCED 1X2 REVERSIBLE 1X1 PHASE-TRANSITION OF PT(110) STUDIED BY LEED AND WORK FUNCTION MEASUREMENTS
IMBIHL, R
LADAS, S
ERTL, G
SURFACE SCIENCE, 1988, 206 (03) : L903 - L912

← 1 2 3 4 5 →