Reversible phase transition between metastable structures of Si(111)c2x8 and 1x1 studied by high-temperature STM

被引：7
|
作者：
Chida, M [1 ]
Minoda, H [1 ]
Tanishiro, Y [1 ]
Yagi, K [1 ]
机构：
[1] Tokyo Inst Technol, Dept Phys, Meguro Ku, Tokyo 1528551, Japan
来源：
SURFACE SCIENCE | 1998年 / 411卷 / 1-2期
关键词：
adatoms; nucleation; scanning tunneling microscopy; silicon; surface diffusion; surface energy; surface structure; morphology; roughness and topography; surface thermodynamics;
D O I：
10.1016/S0039-6028(98)00398-7
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We studied metastable reconstructions on quenched Si(lll) surfaces by using high-temperature STM. It was found that the c2 x 8 is most stable in metastable reconstructions of 2 x 2, c2 x 4, c2 x 8 and root 3 x root 3 on the quenched Si(111) surface. The reversible phase transition between the c2 x 8 and 1 x 1 structures at about 230 degrees C was found on the surface, which is similar to that between the c2 x 8 and 1 x 1 structures on Ge(111) surfaces around 300 degrees C. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：L822 / L827
页数：6
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