Epitaxial films of GaAs and GaN on fianit substrates

被引：1

作者：

Buzynin, AN ^{[1
]}

Osiko, VV ^{[1
]}

Lomonova, EE ^{[1
]}

Buzynin, YN ^{[1
]}

Usikov, AS ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Gen Phys, Moscow 117942, Russia

来源：

WIDE-BANDGAP SEMICONDUCTORS FOR HIGH POWER, HIGH FREQUENCY AND HIGH TEMPERATURE | 1998年 / 512卷

关键词：

D O I：

10.1557/PROC-512-417

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Submicron heteroepitaxial GaAs and GaN films were grown by both conventional MOCVD and "capillary epitaxy" technique on (001) and (111) fianit (YSZ)substrates. A preliminary annealing of the substrates under vakuum was made in order to stabilize the surface by removing of some amount of oxygen. Conditions of single crystalline growth of GaAs submicron films (50-500nm) have been determined. The films had minor-like surface morphology and high structural perfection. The distribution of Zr, O, Y across the film-substrate interface was sharp and doping impurities contents were uniform over the film. PL spectra of undoped GaN films on YSZ were studied.

引用

页码：417 / 422

页数：6

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