VANDERWAALS BONDING OF GAAS EPITAXIAL LIFTOFF FILMS ONTO ARBITRARY SUBSTRATES

被引：354
|
作者：
YABLONOVITCH, E
HWANG, DM
GMITTER, TJ
FLOREZ, LT
HARBISON, JP
机构：
[1] Bell Communications Research, Navesink Research Center, Red Bank
来源：
APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 24期
关键词：
D O I：
10.1063/1.102896
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Epitaxial liftoff is an alternative to lattice-mismatched heteroepitaxial growth. Multilayer AlxGa1-xAs epitaxial films are separated from their growth substrates by undercutting an AlAs release layer in HF acid (selectivity ≳108 for x≤0.4). The resulting Al xGa1-xAs films tend to bond by natural intermolecular surface forces to any smooth substrate (Van der Waals bonding). We have demonstrated GaAs thin-film bonding by surface tension forces onto Si, glass, sapphire, LiNbO3, InP, and diamond substrates, as well as self-bonding onto GaAs substrates. In transmission electron microscopy the substrate and thin-film atomic lattices can be simultaneously imaged, showing only a thin (20-100 Å) amorphous layer in between.
引用
收藏
页码：2419 / 2421
页数：3
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