MOCVD of high-k dielectrics, tantalum nitride and copper from directly injected liquid precursors

被引：0
|
作者：
Senzaki, Y [1 ]
Hochberg, AK [1 ]
Norman, JAT [1 ]
机构：
[1] Schumacher, Carlsbad, CA 92009 USA
来源：
ADVANCED MATERIALS FOR OPTICS AND ELECTRONICS | 2000年 / 10卷 / 3-5期
关键词：
MOCVD; high-k dielectrics; copper CVD; direct liquid injection; tantalum nitride; Ta2O5;
D O I：
10.1002/1099-0712(200005/10)10:3/5<93::AID-AMO403>3.3.CO;2-H
中图分类号：
O69 [应用化学];
学科分类号：
081704 ;
摘要：
Thin films of tantalum oxide and tantalum nitride for microelectronics applications can be deposited by MOCVD using direct injection of same liquid precursors of the type R-N = Ta(NEt2)(3). High-k mixed-metal oxides, such as Zr-Sn-Ti-O, metal doped TaOx and zirconium silicate, can also be deposited at relatively low temperatures from liquid mixtures as single-source precursors without solvent, This solventless CVD system is considered a more cost effective and environmentally benign process than conventional liquid injection of metal-organic precursors dissolved In organic solvents, In addition, recent advances in copper CVD precursors are reviewed. Copyright (C) 2000 John Wiley & Sons, Ltd.
引用
收藏
页码：93 / 103
页数：11
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