MOCVD of high-k dielectrics, tantalum nitride and copper from directly injected liquid precursors

被引：0

作者：

Senzaki, Y ^{[1
]}

Hochberg, AK ^{[1
]}

Norman, JAT ^{[1
]}

机构：

[1] Schumacher, Carlsbad, CA 92009 USA

来源：

ADVANCED MATERIALS FOR OPTICS AND ELECTRONICS | 2000年 / 10卷 / 3-5期

关键词：

MOCVD; high-k dielectrics; copper CVD; direct liquid injection; tantalum nitride; Ta2O5;

D O I：

10.1002/1099-0712(200005/10)10:3/5<93::AID-AMO403>3.3.CO;2-H

中图分类号：

O69 [应用化学];

学科分类号：

081704 ;

摘要：

Thin films of tantalum oxide and tantalum nitride for microelectronics applications can be deposited by MOCVD using direct injection of same liquid precursors of the type R-N = Ta(NEt2)(3). High-k mixed-metal oxides, such as Zr-Sn-Ti-O, metal doped TaOx and zirconium silicate, can also be deposited at relatively low temperatures from liquid mixtures as single-source precursors without solvent, This solventless CVD system is considered a more cost effective and environmentally benign process than conventional liquid injection of metal-organic precursors dissolved In organic solvents, In addition, recent advances in copper CVD precursors are reviewed. Copyright (C) 2000 John Wiley & Sons, Ltd.

引用

页码：93 / 103

页数：11

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