InP/GaAsSb DHBTs With 500-GHz Maximum Oscillation Frequency

被引：17
|
作者：
Loevblom, Rickard [1 ]
Flueckiger, Ralf [1 ]
Zeng, Yuping [1 ]
Ostinelli, Olivier [1 ]
Alt, Andreas R. [1 ]
Benedickter, Hansruedi [1 ]
Bolognesi, C. R. [1 ]
机构：
[1] ETH, Millimeter Wave Elect Grp, CH-8092 Zurich, Switzerland
来源：
IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 05期
关键词：
Double heterojunction bipolar transistors (DHBTs); InP/GaAsSb; maximum oscillation frequency (f(MAX)); millimeter-wave transistors; GHZ; BVCEO; BASE;
D O I：
10.1109/LED.2011.2118738
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report the realization of 0.3-mu m emitter InP/GaAsSb/InP DHBTs with cutoff frequencies f(T) = 365 GHz and f(MAX) = 501 GHz. Our devices were implemented with a 15-nm C-doped graded base and a 125-nm InP collector and feature a peak current gain beta = 35, with a base sheet resistance R(SH) = 1160 Omega/sq. The present transistors are the first InP/GaAsSb DHBTs to feature f(MAX) > 500 GHz, according to three extraction schemes. The present transistor performance is limited by an undepleted collector layer associated with a doping tail extending from the subcollector.
引用
收藏
页码：629 / 631
页数：3
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