Multi-Finger 250-nm InP/GaAsSb DHBTs with Record 37.3 % Class-A PAE at 94 GHz

被引：2

作者：

Hamzeloui, Sara ^{[1
]}

Arabhavi, Akshay M. ^{[1
]}

Ciabattini, Filippo ^{[1
]}

Ebrahimi, Mojtaba ^{[1
]}

Mueller, Markus ^{[2
]}

Ostinelli, Olivier ^{[1
]}

Schroeter, Michael ^{[2
]}

Bolognesi, Colombo R. ^{[1
]}

机构：

[1] Swiss Fed Inst Technol, Millimeter Wave Elect MWE Grp, Zurich, Switzerland

[2] Tech Univ Dresden, Chair Elect Devices & Integrated Circuits CEDIC, Dresden, Germany

来源：

2023 IEEE BICMOS AND COMPOUND SEMICONDUCTOR INTEGRATED CIRCUITS AND TECHNOLOGY SYMPOSIUM, BCICTS | 2023年

关键词：

InP/GaAsSb Double Heterojunction Bipolar Transistors (DHBTs); Common-Emitter; Common-Base; Multi-Finger; Maximum Output Power; Power-Added Efficiency (PAE); POWER;

D O I：

10.1109/BCICTS54660.2023.10310957

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the first DC, RF, and W-band largesignal power performance of multi-finger 250-nm InP/GaAsSb DHBTs for power amplifier applications at mm- and sub-mm-wave frequencies. Two- and four-finger DHBTs in either common-emitter (CE) or common-base (CB) configuration are fabricated with 7.5- and 10-mu m-long emitter fingers. A 94 GHz InP HBT record measured class-A power-added efficiency PAE = 37.3 % is achieved with two-finger CB-HBTs. A saturated output power P-OUT,P- SAT = 15 dBm is measured with both the four-finger CE- and CB-DHBT structures. The high cut-off frequencies (f(T)/f(MAX) approximate to 500/760 GHz) and superior power properties of InP/GaAsSb multi-finger DHBTs highlight their attractiveness for sub-mm-wave power amplifiers (PAs).

引用

页码：145 / 148

页数：4

共 14 条

[1] InP/GaAsSb DHBT Power Performance with 30% Class-A PAE at 94 GHz
Quan, W.
Arabhavi, A. M.
Marti, D.
Hamzeloui, Sara
Ostinelli, O.
Bolognesi, C. R.
2019 IEEE BICMOS AND COMPOUND SEMICONDUCTOR INTEGRATED CIRCUITS AND TECHNOLOGY SYMPOSIUM (BCICTS 2019), 2019,
[2] A 130-GHz Power Amplifier in a 250-nm InP Process with 32% PAE
Ning, Kang
Fang, Yihao
Rodwell, Mark
Buckwalter, James
2020 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM (RFIC), 2020, : 195 - 198
[3] Multi-finger 250nm InP HBTs for 220GHz mm-Wave Power
Griffith, Zach
Urteaga, Miguel
Rowell, Petra
Pierson, Richard
Field, Mark
2012 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM), 2013, : 204 - 207
[4] Record 35% Power-Added Efficiency at 170 GHz in 300-nm InP/GaAsSb DHBTs
Hamzeloui, Sara
Arabhavi, Akshay M.
Ciabattini, Filippo
Bonomo, Giorgio
Ebrahimi, Mojtaba
Chaudhary, Rimjhim
Mueller, Markus
Ostinelli, Olivier
Schroeter, Michael
Bolognesi, Colombo R.
IEEE MICROWAVE AND WIRELESS TECHNOLOGY LETTERS, 2024, 34 (08): : 1003 - 1006
[5] A 220-294 GHz Power Amplifier with 10-dBm Psat and 2.2% PAE in 250-nm InP DHBT
Jyo, Teruo
Hamada, Hiroshi
Nagatani, Munehiko
Wakita, Hitoshi
Abdo, Ibrahim
Mutoh, Miwa
Shiratori, Yuta
Okada, Kenichi
Shirane, Atsushi
Takahashi, Hiroyuki
2022 IEEE BICMOS AND COMPOUND SEMICONDUCTOR INTEGRATED CIRCUITS AND TECHNOLOGY SYMPOSIUM, BCICTS, 2022, : 152 - 155
[6] A 78-mW 220-GHz Power Amplifier With Peak 18.4% PAE in 250-nm InP HBT Technology
Alizadeh, Amirreza
Rowell, Petra V.
Griffith, Zach
Urteaga, Miguel E.
Rodwell, Mark J. W.
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2024, 72 (10) : 5789 - 5798
[7] A 140GHz power amplifier with 20.5dBm output power and 20.8% PAE in 250-nm InP HBT technology
Ahmed, Ahmed S. H.
Seo, Munkyo
Farid, Ali A.
Urteagas, Miguel
Buckwalter, James F.
Rodwell, Mark J. W.
PROCEEDINGS OF THE 2020 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS), 2020, : 492 - 495
[8] A 2-stage, 140-GHz Class-B Power Amplifier Achieving 22.5% PAE at 17.3 dBm in a 250-nm InP HBT Technology
Lam, Eythan
Ning, Kang
Ahmed, Ahmed
Rodwell, Mark
Buckwalter, James
2022 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS 2022), 2022, : 448 - 451
[9] A 110-170-GHz Multi-Mode Transconductance Mixer in 250-nm InP DHBT Technology
Yan, Yu
Bao, Mingquan
Gunnarsson, Sten E.
Vassilev, Vessen
Zirath, Herbert
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2015, 63 (09) : 2897 - 2904
[10] A 180-220-GHz, 12.7-dBm peak Psat and 17.3% peak PAE Power Amplifier in 250-nm InP HBT
Chien, Jeff Shih-Chieh
Lee, Wonho
Buckwalter, James F.
2022 IEEE BICMOS AND COMPOUND SEMICONDUCTOR INTEGRATED CIRCUITS AND TECHNOLOGY SYMPOSIUM, BCICTS, 2022, : 166 - 169

← 1 2 →