A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability

被引：125

作者：

Zeng, Fanming ^{[1
]}

An, Judy Xilin ^{[1
]}

Zhou, Guangnan ^{[1
]}

Li, Wenmao ^{[1
]}

Wang, Hui ^{[1
]}

Duan, Tianli ^{[2
]}

Jiang, Lingli ^{[1
]}

Yu, Hongyu ^{[1
,3
,4
]}

机构：

[1] Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China

[2] Southern Univ Sci & Technol, Mat Characterizat & Preparat Ctr, Shenzhen 518055, Peoples R China

[3] Shenzhen Key Lab Third Generat Semicond, Shenzhen 518055, Peoples R China

[4] GaN Device Engn Technol Res Ctr Guangdong, Shenzhen 518055, Peoples R China

来源：

ELECTRONICS | 2018年 / 7卷 / 12期

关键词：

AlGaN; GaN; high-electron mobility transistor (HEMTs); p-GaN; enhancement-mode; RESISTANCE OHMIC CONTACTS; FIELD-EFFECT TRANSISTORS; HIGH-THRESHOLD-VOLTAGE; GATE LEAKAGE CURRENT; LOW DEFECT DENSITY; SURFACE PASSIVATION; PIEZOELECTRIC POLARIZATION; RF CHARACTERISTICS; ION-IMPLANTATION; CURRENT COLLAPSE;

D O I：

10.3390/electronics7120377

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

GaN based high electron mobility transistors (HEMTs) have demonstrated extraordinary features in the applications of high power and high frequency devices. In this paper, we review recent progress in AlGaN/GaN HEMTs, including the following sections. First, challenges in device fabrication and optimizations will be discussed. Then, the latest progress in device fabrication technologies will be presented. Finally, some promising device structures from simulation studies will be discussed.

引用

页数：20

共 50 条

[21] Model the AlGaN/GaN High Electron Mobility Transistors
Wang, Yan
Cheng, Xiaoxu
Li, Xiaojian
NANOTECHNOLOGY 2012, VOL 2: ELECTRONICS, DEVICES, FABRICATION, MEMS, FLUIDICS AND COMPUTATIONAL, 2012, : 738 - 743
[22] Research Progress in Breakdown Enhancement for GaN-Based High-Electron-Mobility Transistors
Tian, Zhiwen
Ji, Xuan
Yang, Dongwei
Liu, Pei
ELECTRONICS, 2023, 12 (21)
[23] Fabrication and characterization of V-gate AlGaN/GaN high-electron-mobility transistors
张凯
曹梦逸
陈永和
杨丽媛
王冲
马晓华
郝跃
Chinese Physics B, 2013, (05) : 488 - 491
[24] Influence of post fabrication annealing on device performance of InAlN/ GaN high electron mobility transistors
Luo, Xin
Cui, Peng
Linewih, Handoko
Cheong, Kuan Yew
Xu, Mingsheng
Chen, Siheng
Wang, Liu
Sun, Jiuji
Dai, Jiacheng
Xu, Xiangang
Han, Jisheng
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2024, 187
[25] Influence of post fabrication annealing on device performance of InAlN/GaN high electron mobility transistors
Luo, Xin
Cui, Peng
Linewih, Handoko
Cheong, Kuan Yew
Xu, Mingsheng
Chen, Siheng
Wang, Liu
Sun, Jiuji
Dai, Jiacheng
Xu, Xiangang
Han, Jisheng
Journal of Physics and Chemistry of Solids, 2024, 187
[26] Fabrication and characterization of V-gate AlGaN/GaN high-electron-mobility transistors
Zhang Kai
Cao Meng-Yi
Chen Yong-He
Yang Li-Yuan
Wang Chong
Ma Xiao-Hua
Hao Yue
CHINESE PHYSICS B, 2013, 22 (05)
[27] The reliability of AlGaN/GaN high electron mobility transistors under step-electrical stresses
Ma Xiao-Hua
Jiao Ying
Ma Ping
He Qiang
Ma Ji-Gang
Zhang Kai
Zhang Hui-Long
Zhang Jin-Cheng
Hao Yue
CHINESE PHYSICS B, 2011, 20 (12)
[28] The reliability of AlGaN/GaN high electron mobility transistors under step-electrical stresses
马晓华
焦颖
马平
贺强
马骥刚
张凯
张会龙
张进成
郝跃
ChinesePhysicsB, 2011, 20 (12) : 399 - 403
[29] Low-noise microwave devices: AlGaN/GaN high electron mobility transistors and oscillators
Vitusevich, S. A.
SIXTH INT KHARKOV SYMPOSIUM ON PHYSICS AND ENGINEERING OF MICROWAVES, MILLIMETER AND SUBMILLIMETER WAVES/WORKSHOP ON TERAHERTZ TECHNOLOGIES, VOLS 1 AND 2, 2007, : 55 - 60
[30] Recent advancement in ScAlN/GaN high electron mobility transistors: Materials, properties, and device performance
Murugapandiyan, P.
Maheswari, S.
Fletcher, A. S. Augustine
Saranya, G.
Anandan, P.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2025, 193

← 1 2 3 4 5 →