Electronic and crystal structure of fully strained LaNiO3 films -: art. no. 113408

被引：60

作者：

Dobin, AY ^{[1
]}

Nikolaev, KR

Krivorotov, IN

Wentzcovitch, RM

Dahlberg, ED

Goldman, AM

机构：

[1] Univ Minnesota, Sch Phys & Astron, Minneapolis, MN 55455 USA

[2] Univ Minnesota, Dept Chem Engn & Mat Sci, Minneapolis, MN 55455 USA

[3] Univ Minnesota, Supercomp Inst Digital Simulat & Adv Computat, Minneapolis, MN 55455 USA

来源：

PHYSICAL REVIEW B | 2003年 / 68卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.68.113408

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

First-principles band structure calculations have been used to investigate epitaxially strained LaNiO3 films. Experimentally, tensile biaxial strain has been realized in pseudomorphic LaNiO3 films grown on SrTiO3 (001) substrates using ozone-assisted molecular beam epitaxy. Measured and calculated out-of-plane lattice parameters are in excellent agreement. This demonstrates the viability of the computational method as well as the high quality of the films.

引用

页数：4

共 50 条

[21] Electronic structure of UH3 thin films prepared by sputter deposition -: art. no. 235108
Gouder, T
Eloirdi, R
Wastin, F
Colineau, E
Rebizant, J
Kolberg, D
Huber, F
PHYSICAL REVIEW B, 2004, 70 (23) : 1 - 6
[22] Hallmark of strong electronic correlations in LaNiO3: Photoemission kink and broadening of fully occupied bands
Deng, Xiaoyu
Ferrero, Michel
Mravlje, Jernej
Aichhorn, Markus
Georges, Antoine
PHYSICAL REVIEW B, 2012, 85 (12)
[23] Electronic structure and optical properties of LaNiO3: First-principles calculations
Guan, Li
Liu, Baoting
Jin, Litao
Guo, Jianxin
Zhao, Qingxun
Wang, Yinglong
Fu, Guangsheng
SOLID STATE COMMUNICATIONS, 2010, 150 (41-42) : 2011 - 2014
[24] Localized microwave resonances in strained SrTiO3 thin films -: art. no. 042902
Irvin, P
Levy, J
Haeni, JH
Schlom, DG
APPLIED PHYSICS LETTERS, 2006, 88 (04) : 1 - 3
[25] Crystal structure and electronic transport of Dy@C82 -: art. no. 115410
Kubozono, Y
Takabayashi, Y
Shibata, K
Kanbara, T
Fujiki, S
Kashino, S
Fujiwara, A
Emura, S
PHYSICAL REVIEW B, 2003, 67 (11)
[26] Effects of Surface Termination and Layer Thickness on Electronic Structures of LaNiO3 Thin Films
Huy Duy Nguyen
Bach Thanh Cong
Morikawa, Yoshitada
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 2018, 87 (11)
[27] Electronic structure of buried LaNiO3 layers in (111)-oriented LaNiO3/LaMnO3 superlattices probed by soft x-ray ARPES
Bruno, F. Y.
Gibert, M.
Walker, S. McKeown
Peil, O. E.
de la Torre, A.
Ricco, S.
Wang, Z.
Catalano, S.
Tamai, A.
Bisti, F.
Strocov, V. N.
Triscone, J. -M.
Baumberger, F.
APL MATERIALS, 2017, 5 (01):
[28] Evolution of the electronic structure in epitaxial Co, Ni, and Cu films -: art. no. 153409
Pampuch, C
Rader, O
Kläsges, R
Carbone, C
PHYSICAL REVIEW B, 2001, 63 (15)
[29] Electronic structure of a bismuth bilayer -: art. no. 113102
Ast, CR
Höchst, H
PHYSICAL REVIEW B, 2003, 67 (11):
[30] Evolution of the electronic structure of Be clusters - art. no. 074329
Cerovski, V
Rao, BK
Khanna, SN
Jena, P
Ishii, S
Ohno, K
Kawazoe, Y
JOURNAL OF CHEMICAL PHYSICS, 2005, 123 (07):

← 1 2 3 4 5 →