Evolution of the electronic structure in epitaxial Co, Ni, and Cu films -: art. no. 153409

被引:16
|
作者
Pampuch, C
Rader, O
Kläsges, R
Carbone, C
机构
[1] BESSY, D-12489 Berlin, Germany
[2] Forschungszentrum Julich, Inst Festkorperforsch, D-52425 Julich, Germany
关键词
D O I
10.1103/PhysRevB.63.153409
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Recently, electronic structure and band width of the system 1.2 monolayers Ni/Cu(100) have been found to be Ni-bulk-like [Mankey et al., Phys. Rev. Lett. 78, 1146 (1997)]. Therefore, we have traced the development of the electronic structure with thickness for various 3d transition metals using angle-resolved photoemission. All studied systems show similar behavior. We find, in contrast to the previous report, a very different electronic structure for the monolayer and for bull;. Moreover, our measured binding energies support the results of local-density calculations which obtain strong narrowing of the 3d band width of 1 monolayer Ni/Cu(100) as compared to bulk Ni.
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页数:4
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