Characterization and optimization of ZnO films for SAW devices

被引：0
|
作者：
Sayago, I [1 ]
Aleixandre, M [1 ]
Ferndádez, MJ [1 ]
Fontecha, JL [1 ]
Arés, L [1 ]
Gutiérrez, FJ [1 ]
Gracià, I [1 ]
Horrillo, MC [1 ]
机构：
[1] CSIC, IFA, Lab Sensores, Madrid 28006, Spain
来源：
2005 Spanish Conference on Electron Devices, Proceedings | 2005年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The piezoelectric characteristics of ZnO films obtained by RF magnetron sputtering in reactive plasma have been researched. ZnO films have been grown on SiO2/Si (100) substrate using a zinc oxide target. Different RF power and reactive plasma have been tested to obtain a good piezoelectric material for SAW applications. Crystalline structures and morphological characteristics of the films were investigated by X-Ray diffraction (XRD) and atomic force microscopy (AFM) respectively. "Al/ZnO/SiO2-Si" configuration SAW devices were fabricated and characterized by frequency response measurements.
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页码：509 / 511
页数：3
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