Packageless AlN/ZnO/Si Structure for SAW Devices Applications

被引：29
|
作者：
Legrani, Ouarda [1 ]
Elmazria, Omar [1 ]
Zhgoon, Sergei [2 ]
Pigeat, Philippe [1 ]
Bartasyte, Ausrine [1 ]
机构：
[1] Univ Lorraine, Inst Jean Lamour, CNRS, UMR 7198, F-54506 Vandoeuvre Les Nancy, France
[2] Moscow Power Engn Inst, Moscow 111250, Russia
来源：
IEEE SENSORS JOURNAL | 2013年 / 13卷 / 02期
关键词：
AlN; finite element method (FEM); packageless structure; surface acoustic wave (SAW); ZnO;
D O I：
10.1109/JSEN.2012.2219692
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The possibility to perform a packageless structure for acoustic wave sensors applications based on AlN/interdigital transducer/ZnO/Si structure was investigated. The effect of thicknesses of AlN and ZnO thin films on structure performance was simulated by 2-D finite element method. Theoretical predictions were confirmed by in-situ measurements of frequency, insertion loss, and thickness during deposition of AlN layer on ZnO/Si.
引用
收藏
页码：487 / 491
页数：5
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