AlN/ZnO/Si Structure - a Packageless Solution for Acoustic Wave Sensors

被引：0
|
作者：
Legrani, O. [1 ]
Elmazria, O. [1 ]
Pigeat, P. [1 ]
Bartasyte, A. [1 ]
Sarry, F. [1 ]
Zhgoon, S.
机构：
[1] Nancy Univ, CNRS, IJL, Vandoeuvre Les Nancy, France
来源：
2011 IEEE SENSORS | 2011年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The possibility to create a packageless structure for acoustic wave sensors applications based on AlN/IDT/ZnO/Si structure is investigated. The effect of thicknesses of AlN and ZnO thin films on structure performance was calculated by two dimensional finite element method. Theoretical predictions were confirmed by in-situ measurements of frequency and insertion loss that were performed during deposition of AlN layer together with AlN film thickness monitoring by interferential reflectometry method.
引用
收藏
页码：492 / 495
页数：4
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