AlN/ZnO/Si Structure - a Packageless Solution for Acoustic Wave Sensors

被引：0

作者：

Legrani, O. ^{[1
]}

Elmazria, O. ^{[1
]}

Pigeat, P. ^{[1
]}

Bartasyte, A. ^{[1
]}

Sarry, F. ^{[1
]}

Zhgoon, S.

机构：

[1] Nancy Univ, CNRS, IJL, Vandoeuvre Les Nancy, France

来源：

2011 IEEE SENSORS | 2011年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The possibility to create a packageless structure for acoustic wave sensors applications based on AlN/IDT/ZnO/Si structure is investigated. The effect of thicknesses of AlN and ZnO thin films on structure performance was calculated by two dimensional finite element method. Theoretical predictions were confirmed by in-situ measurements of frequency and insertion loss that were performed during deposition of AlN layer together with AlN film thickness monitoring by interferential reflectometry method.

引用

页码：492 / 495

页数：4

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