Growth of thin films of Co3O4 by atomic layer deposition

被引：86
|
作者：
Klepper, K. B. [1 ]
Nilsen, O. [1 ]
Fjellvag, H. [1 ]
机构：
[1] Univ Oslo, Dept Chem, Ctr Mat Sci & Nanotechnol, N-0315 Oslo, Norway
来源：
THIN SOLID FILMS | 2007年 / 515卷 / 20-21期
关键词：
cobalt oxide; Atomic layer deposition (ALD); Atomic layer epitaxy (ALE); Atomic layer chemical vapour deposition (ALCVD);
D O I：
10.1016/j.tsf.2007.03.182
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Thin films of cobalt oxide were made by atomic layer deposition (ALD), using Co(thd)(2) (Hthd = 2,2,6,6-tetramethylheptan-3,5-dione) and ozone as precursors. Films were deposited on soda-lime glass and single crystals of Si(100). Pulse and purge parameters for ALD-type growth were established and such growth was found to occur for depositions within the temperature range of 114-307 degrees C. A preferred (100)-orientation was observed at the low end of the temperature range for films deposited on soda-lime glass and Si(100). At the high end of the temperature range, films deposited on Si(100) showed (111)-oriented growth, while films deposited on soda-lime glass substrates were unoriented. The electrical resistivity of as-deposited films on soda-lime glass were in the range of 0.13-4.48 ohm cm and showed a non-monotonic dependence on film thickness, with a minimum for films with a large proportion of grain boundaries. (C) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：7772 / 7781
页数：10
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