Atomic layer deposition of Co3O4 thin films using a CoI2/O2 precursor combination

被引：26
|
作者：
Rooth, Marten [1 ]
Lindahl, Erik [1 ]
Harsta, Anders [1 ]
机构：
[1] Uppsala Univ, Angstrom Lab, Dept Chem Mat, SE-75121 Uppsala, Sweden
来源：
CHEMICAL VAPOR DEPOSITION | 2006年 / 12卷 / 04期
关键词：
ALD; Co3O4; CoI2; epitaxy; XRD;
D O I：
10.1002/cvde.200506447
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Thin films Of Co3O4 have been successfully deposited on SiO2/Si(100) and MgO(001) substrates by atomic layer deposition (ALD) using the precursor combination CoI2/O-2. The deposition temperature was found to have a strong influence on the growth rate. On SiO2/Si(100) substrates, growth rates of about 0.2 nm per cycle were recorded at 500 degrees C, decreasing to 0.004 nm per cycle at 700 degrees C. Oil MgO(001) substrates the growth rates were lower, reaching about 0.12 nm per cycle at 475 degrees C, while no growth could be detected at 700 degrees C. The films were found to grow as the cubic Co3O4 phase throughout the temperature range 475-700 degrees C, polycrystalline on SiO2/Si(100), and epitaxial on MgO(001). On MgO(001) the epitaxial relationship was established to the in-plane orientation (001)[100](Co3O4)parallel to(001)[100](MgO). No iodine could be detected by Rutherford backscattering spectroscopy (RBS) or by X-ray fluorescence (XRF) spectroscopy in any of the deposited films.
引用
收藏
页码：209 / 213
页数：5
相关论文
共 50 条
  • [1] Growth of thin films of Co3O4 by atomic layer deposition
    Klepper, K. B.
    Nilsen, O.
    Fjellvag, H.
    [J]. THIN SOLID FILMS, 2007, 515 (20-21) : 7772 - 7781
  • [2] Remote Plasma Atomic Layer Deposition of Co3O4 Thin Films
    Donders, M. E.
    Knoops, H. C. M.
    van de Sanden, M. C. M.
    Kessels, W. M. M.
    Notten, P. H. L.
    [J]. ATOMIC LAYER DEPOSITION APPLICATIONS 5, 2009, 25 (04): : 39 - 47
  • [3] Remote Plasma Atomic Layer Deposition of Co3O4 Thin Films
    Donders, M. E.
    Knoops, H. C. M.
    van de Sanden, M. C. M.
    Kessels, W. M. M.
    Notten, P. H. L.
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2011, 158 (04) : G92 - G96
  • [4] Atomic Layer Deposition of Ru Thin Films Using a Ru(0) Metallorganic Precursor and O2
    Hong, Tae Eun
    Choi, Sang-Hyeok
    Yeo, Seungmin
    Park, Ji-Yoon
    Kim, Soo-Hyun
    Cheon, Taehoon
    Kim, Hoon
    Kim, Min-Kyu
    Kim, Hyungjun
    [J]. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2013, 2 (03) : P47 - P53
  • [5] Atomic layer deposition of thin films using O2 as oxygen source
    Schuisky, M
    Aarik, J
    Kukli, K
    Aidla, A
    Hårsta, A
    [J]. LANGMUIR, 2001, 17 (18) : 5508 - 5512
  • [6] Atomic layer deposition of Ta2O5 using the TaI5 and O2 precursor combination
    Sundqvist, J
    Högberg, H
    Hårsta, A
    [J]. CHEMICAL VAPOR DEPOSITION, 2003, 9 (05) : 245 - 248
  • [7] Atomic layer deposition of epitaxial and polycrystalline SnO2 films from the SnI4/O2 precursor combination
    Sundqvist, J
    Tarre, A
    Rosental, A
    Hårsta, A
    [J]. CHEMICAL VAPOR DEPOSITION, 2003, 9 (01) : 21 - 25
  • [8] Atomic layer deposition of polycrystalline HfO2 films by the HfI4-O2 precursor combination
    Sundqvist, J
    Hårsta, A
    Aarik, J
    Kukli, K
    Aidla, A
    [J]. THIN SOLID FILMS, 2003, 427 (1-2) : 147 - 151
  • [9] Thin films of In2O3 by atomic layer deposition using In(acac)3
    Nilsen, O.
    Balasundaraprabhu, R.
    Monakhov, E. V.
    Muthukumarasamy, N.
    Fjellvag, H.
    Svensson, B. G.
    [J]. THIN SOLID FILMS, 2009, 517 (23) : 6320 - 6322
  • [10] Selective Atomic Layer Deposition of Co Thin Films Using Co(EtCp)2 Precursor
    Kim, Sujeong
    Kim, Yong Tae
    Heo, Jaeyeong
    [J]. KOREAN JOURNAL OF MATERIALS RESEARCH, 2024, 34 (03): : 163 - 169
12345