Growth of thin films of Co3O4 by atomic layer deposition

被引：86
|
作者：
Klepper, K. B. [1 ]
Nilsen, O. [1 ]
Fjellvag, H. [1 ]
机构：
[1] Univ Oslo, Dept Chem, Ctr Mat Sci & Nanotechnol, N-0315 Oslo, Norway
来源：
THIN SOLID FILMS | 2007年 / 515卷 / 20-21期
关键词：
cobalt oxide; Atomic layer deposition (ALD); Atomic layer epitaxy (ALE); Atomic layer chemical vapour deposition (ALCVD);
D O I：
10.1016/j.tsf.2007.03.182
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Thin films of cobalt oxide were made by atomic layer deposition (ALD), using Co(thd)(2) (Hthd = 2,2,6,6-tetramethylheptan-3,5-dione) and ozone as precursors. Films were deposited on soda-lime glass and single crystals of Si(100). Pulse and purge parameters for ALD-type growth were established and such growth was found to occur for depositions within the temperature range of 114-307 degrees C. A preferred (100)-orientation was observed at the low end of the temperature range for films deposited on soda-lime glass and Si(100). At the high end of the temperature range, films deposited on Si(100) showed (111)-oriented growth, while films deposited on soda-lime glass substrates were unoriented. The electrical resistivity of as-deposited films on soda-lime glass were in the range of 0.13-4.48 ohm cm and showed a non-monotonic dependence on film thickness, with a minimum for films with a large proportion of grain boundaries. (C) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：7772 / 7781
页数：10
相关论文
共 50 条
  • [31] THERMAL SWITCHING BEHAVIOR OF CO3O4 THIN-FILMS
    LOSER, W
    MATTHECK, C
    HAUBENREISSER, W
    [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1974, 22 (01): : 65 - 73
  • [32] Co3O4 thin films prepared by hollow cathode discharge
    Olejnicek, Jiri
    Smid, Jiri
    Perekrestov, Roman
    Ksirova, Petra
    Rathousky, Jiri
    Kohout, Michal
    Dvorakova, Michaela
    Kment, Stepan
    Jurek, Karel
    Cada, Martin
    Hubicka, Zdenek
    [J]. SURFACE & COATINGS TECHNOLOGY, 2019, 366 : 303 - 310
  • [33] Interface and electronic characterization of thin epitaxial Co3O4 films
    Vaz, C. A. F.
    Wang, H. -Q.
    Ahn, C. H.
    Henrich, V. E.
    Baykara, M. Z.
    Schwendemann, T. C.
    Pilet, N.
    Albers, B. J.
    Schwarz, U. D.
    Zhang, L. H.
    Zhu, Y.
    Wang, J.
    Altman, E. I.
    [J]. SURFACE SCIENCE, 2009, 603 (02) : 291 - 297
  • [34] Atomic Layer Deposition of WO3 Thin Films using W(CO)6 and O3 Precursors
    Malm, Jari
    Sajavaara, Timo
    Karppinen, Maarit
    [J]. CHEMICAL VAPOR DEPOSITION, 2012, 18 (7-9) : 245 - 248
  • [35] Epitaxial growth of Co3O4 films by low temperature, low pressure chemical vapour deposition
    Shalini, K
    Mane, AU
    Shivashankar, SA
    Rajeswari, M
    Choopun, S
    [J]. JOURNAL OF CRYSTAL GROWTH, 2001, 231 (1-2) : 242 - 247
  • [36] Epitaxial growth of Co3O4 films by low temperature, low pressure chemical vapor deposition
    Shalini, K
    Mane, AU
    Lakshmi, R
    Shivaskankar, SA
    Rajeswari, M
    Choopun, S
    [J]. RECENT DEVELOPMENTS IN OXIDE AND METAL EPITAXY-THEORY AND EXPERIMENT, 2000, 619 : 129 - 134
  • [37] SrCoO3-δ thin films by atomic layer deposition
    Ahvenniemi, Esko
    Matvejeff, Mikko
    Karppinen, Maarit
    [J]. APPLIED SURFACE SCIENCE, 2014, 320 : 838 - 842
  • [38] Atomic layer deposition of YMnO3 thin films
    Choi, Ju H.
    Pham, Calvin
    Dorman, James
    Kim, Taeseung
    Chang, Jane P.
    [J]. JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2020, 498
  • [39] Atomic layer deposition of GdF3 thin films
    Atosuo, Elisa
    Mizohata, Kenichiro
    Mattinen, Miika
    Mantymaki, Miia
    Vehkamaki, Marko
    Leskela, Markku
    Ritala, Mikko
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2022, 40 (02):
  • [40] Atomic layer deposition of TbF3 thin films
    Atosuo, Elisa
    Ojala, Juha
    Heikkila, Mikko J.
    Mattinen, Miika
    Mizohata, Kenichiro
    Raisanen, Jyrki
    Leskela, Markku
    Ritala, Mikko
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2021, 39 (02):
12345