Design optimization of InGaAsP-InGaAlAs 1.55 μm strain-compensated MQW lasers for direct modulation applications

被引：0
|
作者：
Akram, MN [1 ]
Silfvenius, C [1 ]
Berggren, J [1 ]
Kjebon, O [1 ]
Schatz, R [1 ]
机构：
[1] Photon & Microwave Lab, Dept Microelect & Informat Technol, S-16440 Kista, Sweden
来源：
2004 International Conference on Indium Phosphide and Related Materials, Conference Proceedings | 2004年
关键词：
InGaAsP; InGaAlAs; MQW lasers;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A comprehensive simulation study of InGaAsP (well)/InGaAlAs(barrier) 1.55 um strain-compensated MQW lasers is presented. For MQWs, a uniform vertical distribution of holes is achieved due to a reduced effective hole confinement energy by optimizing the bandgap and strain of the barriers and p-doping in the active region. Some preliminary results are also presented for the manufactured lasers using these QWs indicating a good material platform.
引用
收藏
页码：418 / 421
页数：4
相关论文
共 34 条
  • [11] Direct modulation properties of 1.55-μm InGaAsP/InP microring lasers
    Mikroulis, Spiros
    Roditi, Eugenia
    Syvridis, Dimitris
    JOURNAL OF LIGHTWAVE TECHNOLOGY, 2008, 26 (1-4) : 251 - 256
  • [12] High-speed and uncooled operation of 1.3-μm InGaAsP strain-compensated MQW BH lasers fabricated on patterned InP substrates
    Hu, Chih-Wei
    Lee, Feng-Ming
    Peng, Te-Chin
    Ou, Tzu-Min
    Wu, Meng-Chyi
    Huang, Yin-Hsun
    JOURNAL OF LIGHTWAVE TECHNOLOGY, 2006, 24 (07) : 2906 - 2911
  • [13] Record high characteristic temperature (To = 122K) of 1.55μm strain-compensated AlGaInAs/AlGaInAs MQW lasers with AlAs/AlInAs multiquantum barrier
    Ohnoki, N
    Okazaki, G
    Koyama, F
    Iga, K
    ELECTRONICS LETTERS, 1999, 35 (01) : 51 - 52
  • [14] Reliable operation of strain-compensated 1.06 mu m InGaAs/InGaAsP/GaAs single quantum well lasers
    Fukunaga, T
    Wada, M
    Hayakawa, T
    APPLIED PHYSICS LETTERS, 1996, 69 (02) : 248 - 250
  • [15] GSMBE growth of compressively strained and strain-compensated InAsP/InGaAsP quantum wells for 1.3μm wavelength lasers
    Chen, JX
    Li, AZ
    Chen, YQ
    Zhang, YG
    Qi, M
    Lin, XR
    Fröjdh, K
    Stoltz, B
    COMPOUND SEMICONDUCTORS 1999, 2000, (166): : 63 - 66
  • [16] 30 GHz direct modulation bandwidth in detuned loaded InGaAsP DBR lasers at 1.55 μm wavelength
    Royal Inst of Technology, Kista, Sweden
    Electron Lett, 6 (488-489):
  • [17] 40-Gb/s direct modulation in 1.3-μm InGaAlAs-MQW RWG DFB lasers
    Nakahara, K.
    Tsuchiya, T.
    Kitatani, T.
    Shinoda, K.
    Taniguchi, T.
    Kikawa, T.
    Aoki, M.
    2007 PACIFIC RIM CONFERENCE ON LASERS AND ELECTRO-OPTICS, VOLS 1-4, 2007, : 266 - 267
  • [18] Temperature dependence of the threshold current in 1.55-μm strain-compensated multiquantum-well distributed-feedback lasers
    Bhattacharya, P
    Yuan, Y
    Brock, T
    Caneau, C
    Bhat, R
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1998, 10 (06) : 778 - 780
  • [19] Design and characterization of strain-compensated GaInAs/GaAsSb type-II MQW structure with operation wavelength at ∼3 μm
    Jiang, W. Y.
    Chen, Baile
    Yuan, Jinrong
    Holmes, A. L., Jr.
    INFRARED TECHNOLOGY AND APPLICATIONS XXXVI, PTS 1 AND 2, 2010, 7660
  • [20] HIGHLY RELIABLE OPERATION OF STRAIN-COMPENSATED 0.98-MU-M INGAAS/INGAP/GAAS LASERS WITH INGAASP STRAINED BARRIERS FOR EDFAS
    TOYONAKA, T
    SAGAWA, M
    HIRAMOTO, K
    SHINODA, K
    UOMI, K
    OHISHI, A
    ELECTRONICS LETTERS, 1995, 31 (03) : 198 - 199
1234