30 GHz direct modulation bandwidth in detuned loaded InGaAsP DBR lasers at 1.55 μm wavelength

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作者：
Royal Inst of Technology, Kista, Sweden [1 ]
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Electron Lett | / 6卷 / 488-489期
关键词：
Bandwidth - Damping - Frequency modulation - Laser tuning - Natural frequencies - Semiconducting gallium arsenide - Semiconducting indium phosphide;
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摘要：
An increased resonance frequency and reduced damping of the resonance peak leading to a record high modulation bandwidth of 30 GHz were observed in 1.55 μm InGaAsP DBR lasers. These results are attributed to the mechanism of detuned loading.
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