Cobalt substituted ZnO thin films: a potential candidate for spintronics

被引：30

作者：

Bhatti, Kanwal Preet ^{[1
]}

Malik, Vivek Kumar ^{[2
]}

Chaudhary, Sujeet ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Phys, Thin Film Lab, New Delhi 110016, India

[2] Univ Fribourg, Dept Phys, CH-1700 Fribourg, Switzerland

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2008年 / 19卷 / 8-9期

关键词：

D O I：

10.1007/s10854-007-9501-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Cobalt doped zinc oxide thin films have been deposited using spray pyrolysis method. These single phasic films exhibited [100] preferential texture and small decrease in the lattice parameter on cobalt substitution. The films having different Co concentration have almost similar surface morphology and microstructure. These Zn1-xCoxO (x <= 0.10) thin films distinctly showed ferromagnetic character at room temperature. The optical transmission measurements of these films clearly proved that in these films Co substitutes for Zn2+ and exists in +2 state. Based on the optical, structural and magnetic measurements, the possibility of occurrence of ferromagnetic ordering due to cobalt clustering is ruled out in these spray-pyrolyzed films. A correlation of the observed ferromagnetic behavior in these Zn1-xCoxO films with structural change resulting from the addition of Co is presented in this paper.

引用

页码：849 / 854

页数：6

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