Cobalt substituted ZnO thin films: a potential candidate for spintronics

被引:30
|
作者
Bhatti, Kanwal Preet [1 ]
Malik, Vivek Kumar [2 ]
Chaudhary, Sujeet [1 ]
机构
[1] Indian Inst Technol, Dept Phys, Thin Film Lab, New Delhi 110016, India
[2] Univ Fribourg, Dept Phys, CH-1700 Fribourg, Switzerland
关键词
D O I
10.1007/s10854-007-9501-4
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Cobalt doped zinc oxide thin films have been deposited using spray pyrolysis method. These single phasic films exhibited [100] preferential texture and small decrease in the lattice parameter on cobalt substitution. The films having different Co concentration have almost similar surface morphology and microstructure. These Zn1-xCoxO (x <= 0.10) thin films distinctly showed ferromagnetic character at room temperature. The optical transmission measurements of these films clearly proved that in these films Co substitutes for Zn2+ and exists in +2 state. Based on the optical, structural and magnetic measurements, the possibility of occurrence of ferromagnetic ordering due to cobalt clustering is ruled out in these spray-pyrolyzed films. A correlation of the observed ferromagnetic behavior in these Zn1-xCoxO films with structural change resulting from the addition of Co is presented in this paper.
引用
收藏
页码:849 / 854
页数:6
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