Comparative results of 980 nm InGaAs/GaAs and 1550 nm AlGaInAs/InP diode lasers

被引：3
|
作者：
Arslan, K. O. [1 ,2 ]
Aksakal, R. [1 ,3 ]
Cakmak, B. [1 ,2 ]
机构：
[1] Erzurum Tech Univ, Dept Elect Elect Engn, Erzurum, Turkey
[2] Erzurum Tech Univ, High Technol Applicat & Res Ctr, Photon Grp, Erzurum, Turkey
[3] Ataturk Univ, Dept Elect Elect Engn, Erzurum, Turkey
来源：
MATERIALS TODAY-PROCEEDINGS | 2021年 / 46卷
关键词：
Rate equations; Semiconductor laser; Transient and steady characteristics; InGaAs/GaAs and AlGaInAs/InP lasers;
D O I：
10.1016/j.matpr.2021.03.282
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Transient and steady-state characteristics of 1550 nm AlGaInAs/InP and 980 nm InGaAs/GaAs diode lasers were comparatively modelled using rate equations. The variations of the number of electrons (N-t) and the output power (P-out-t) with time were examined in the transient regime for the both lasers. In addition steady-state characteristics, the number of electrons (N-I) and the output power versus current (L-I), was also investigated for different values of cavity length, stripe-width and active layer thickness. We also verified for both of the lasers that L-I simulation results are well agreed with the experimental results. (C) 2021 Elsevier Ltd.
引用
收藏
页码：7015 / 7020
页数：6
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