Comparative results of 980 nm InGaAs/GaAs and 1550 nm AlGaInAs/InP diode lasers

Transient and steady-state characteristics of 1550 nm AlGaInAs/InP and 980 nm InGaAs/GaAs diode lasers were comparatively modelled using rate equations. The variations of the number of electrons (N-t) and the output power (P-out-t) with time were examined in the transient regime for the both lasers. In addition steady-state characteristics, the number of electrons (N-I) and the output power versus current (L-I), was also investigated for different values of cavity length, stripe-width and active layer thickness. We also verified for both of the lasers that L-I simulation results are well agreed with the experimental results. (C) 2021 Elsevier Ltd.