Fundamental limitations of high power 980nm InGaAs/GaAs pump lasers

被引:0
|
作者
Lock, D [1 ]
Sweeney, SJ [1 ]
Adams, AR [1 ]
机构
[1] Univ Surrey, Dept Phys, Surrey GU2 7XH, England
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper shows that the output power and. efficiency of 990 nm high power lasers is limited by Auger recombination which contributes. 15% of the threshold current at room temperature.
引用
收藏
页码:427 / 428
页数:2
相关论文
共 50 条
  • [1] Investigation of 980nm GaInAs/GaAs/GaInP QW high power lasers
    Wang, LJ
    Wu, SL
    Liu, Y
    Ning, YQ
    Diaz, J
    Eliashevich, I
    Yi, HJ
    Razeghi, M
    [J]. SEMICONDUCTOR LASERS III, 1998, 3547 : 102 - 104
  • [2] High power 980nm and 1480nm lasers
    Kasukawa, A
    [J]. OPTICAL AMPLIFIERS AND THEIR APPLICATIONS, PROCEEDINGS, 2001, 44 : 49 - 51
  • [3] High power 980nm strained InGaAs/AlGaAs/GaAs quantum well laser
    Hua, JZ
    Guan, XG
    [J]. SEMICONDUCTOR LASERS II, 1996, 2886 : 328 - 334
  • [4] Longitudinally resolved measurements of carrier concentration and gain in 980nm InGaAs/GaAs high power quantum well lasers
    Bennett, AJ
    Sargent, EH
    Clayton, R
    Kim, HB
    Xu, JM
    [J]. FABRICATION, TESTING, AND RELIABILITY OF SEMICONDUCTOR LASERS II, 1997, 3004 : 160 - 169
  • [5] High power and high reliability InGaAs broad area lasers emitting between 910 and 980nm
    Zou, Y
    Zucker, E
    Uppal, K
    Coblentz, D
    Liang, P
    Peters, M
    Craig, R
    [J]. LEOS 2000 - IEEE ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS. 1 & 2, 2000, : 510 - 511
  • [6] High power 980 nm pump lasers
    Smith, GM
    Loeber, DAS
    Solimine, SD
    [J]. LEOS 2000 - IEEE ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS. 1 & 2, 2000, : 512 - 513
  • [7] HIGH-POWER 980NM NONABSORBING FACET LASERS
    UNGAR, JE
    KWONG, NSK
    OH, SW
    CHEN, JS
    BARCHAIM, N
    [J]. ELECTRONICS LETTERS, 1994, 30 (21) : 1766 - 1767
  • [8] Finite element method applied to stress simulation of high power 980nm pump lasers
    Manna, M
    Magistrali, F
    Maini, M
    Reichenbach, D
    [J]. MICROELECTRONICS AND RELIABILITY, 1997, 37 (10-11): : 1667 - 1670
  • [9] Very high power operation of 980 nm single-mode InGaAs/AlGaAs pump lasers
    Bettiati, MA
    Starck, C
    Laruelle, F
    Cargemel, V
    Pagnod, P
    Garabedian, P
    Keller, D
    Ughetto, G
    Bertreux, JC
    Raymond, L
    Gelly, G
    Capella, RM
    [J]. HIGH-POWER DIODE LASER TECHNOLOGY AND APPLICATIONS IV, 2006, 6104
  • [10] Super-high power density, single mode 980nm pump lasers with weak temperature dependence
    Gao, W
    Xu, ZT
    Nelson, A
    Luo, KJ
    Cheng, LS
    Mastrovito, A
    [J]. 2005 Conference on Lasers & Electro-Optics (CLEO), Vols 1-3, 2005, : 417 - 419