High power and high reliability InGaAs broad area lasers emitting between 910 and 980nm

被引：0

作者：

Zou, Y ^{[1
]}

Zucker, E ^{[1
]}

Uppal, K ^{[1
]}

Coblentz, D ^{[1
]}

Liang, P ^{[1
]}

Peters, M ^{[1
]}

Craig, R ^{[1
]}

机构：

[1] SDL Inc, San Jose, CA 95134 USA

来源：

LEOS 2000 - IEEE ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS. 1 & 2 | 2000年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High power InGaAs multi-mode broad area semiconductor lasers emitting between 910nm and 980 nm are required as optical pumps for Er+ and Yb+ doped double clad fiber lasers and amplifiers. Double clad fibers and amplifiers have found increasing commercial applications in both communication and industrial fields, where high power and high reliability are required. We developed two generations of devices to meet this need, which will be discussed separately below.

引用

页码：510 / 511

页数：2

共 50 条

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