Effects of slurry components on the surface characteristics when chemical mechanical polishing NiP/Al substrate

被引:10
|
作者
Lin, SC [1 ]
Huang, HC [1 ]
Hong, HC [1 ]
机构
[1] Natl Tsing Hua Univ, Dept Power Mech Engn, Hsinchu 300, Taiwan
关键词
planarization; surface roughness; aluminium oxide; silicon oxide;
D O I
10.1016/j.tsf.2004.12.046
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A series of experiments were conducted to study the effects of slurry components on surface characteristics as well as material removal rate when polishing NiP/Al substrate disk. It was shown that with a finer and softer abrasive, a better surface roughness and waviness could be achieved but the material removal rate is relatively slow. Comparing with H2O2, oxidizer HNO3 results in higher material removal rate, better surface roughness but slightly degraded surface waviness. The increase in oxidizer concentration will increase material removal rate, slightly improve surface roughness but slightly degrade the surface waviness. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:400 / 406
页数:7
相关论文
共 50 条
  • [21] Effects of silica slurry temperature on chemical mechanical polishing for tetraethyl orthosilicate film
    Kim, NH
    Seo, YJ
    Lee, WS
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (37-41): : L1256 - L1258
  • [22] Polishing parameter dependencies and surface oxidation of chemical mechanical polishing of Al thin films
    Wrschka, P
    Hernandez, J
    Hsu, Y
    Kuan, TS
    Oehrlein, GS
    Sun, HJ
    Hansen, DA
    King, J
    Fury, MA
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1999, 146 (07) : 2689 - 2696
  • [23] Slurry components of TiO2thin film in chemical mechanical polishing附视频
    段波
    周建伟
    刘玉岭
    王辰伟
    张玉峰
    Journal of Semiconductors, 2014, (10) : 194 - 198
  • [24] Analysis of the Polishing Slurry Flow of Chemical Mechanical Polishing by Polishing Pad with Phyllotactic Pattern
    Lv Yushan
    Zhang Tian
    Wang Jun
    Li Nan
    Duan Min
    Xing Xue-Ling
    FOURTH INTERNATIONAL SEMINAR ON MODERN CUTTING AND MEASUREMENT ENGINEERING, 2011, 7997
  • [25] Effects of Chemical Additives of CMP Slurry on Surface Mechanical Characteristics and Material Removal of Copper
    Liao, Chenglong
    Guo, Dan
    Wen, Shizhu
    Luo, Jianbin
    TRIBOLOGY LETTERS, 2012, 45 (02) : 309 - 317
  • [26] Effects of Chemical Additives of CMP Slurry on Surface Mechanical Characteristics and Material Removal of Copper
    Chenglong Liao
    Dan Guo
    Shizhu Wen
    Jianbin Luo
    Tribology Letters, 2012, 45 : 309 - 317
  • [27] Study on the Slurry for Chemical Mechanical Polishing of GaN Wafer
    Liu, Yang
    Zhang, Baoguo
    Qin, Sihui
    Wang, Yijun
    Xian, Wenhao
    Liu, Min
    Cui, Dexing
    CONFERENCE OF SCIENCE & TECHNOLOGY FOR INTEGRATED CIRCUITS, 2024 CSTIC, 2024,
  • [28] Tribological analysis on powder slurry in chemical mechanical polishing
    Jeng, YR
    Tsai, HJ
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2002, 35 (13) : 1585 - 1591
  • [29] Formulation of slurry for chemical mechanical polishing of Cu substrates
    Hazarika, Jenasree
    Patil, Chetana Sudhakar
    Rajaraman, Prasanna Venkatesh
    MATERIALS TODAY-PROCEEDINGS, 2021, 39 : 1781 - 1785
  • [30] The effect of pad conditioning on planarization characteristics of chemical mechanical polishing (CMP) with ceria slurry
    Yamamoto, Y
    Kozuki, T
    Shibuki, S
    Maeda, K
    Inoue, Y
    Tawara, S
    Toge, N
    Chemical-Mechanical Planarization-Integration, Technology and Reliability, 2005, 867 : 117 - 122