Effects of silica slurry temperature on chemical mechanical polishing for tetraethyl orthosilicate film

The effects of silica slurry temperature on the chemical mechanical polishing (CMP) performance of tetraethyl orthosilicate (TEOS) film were investigated. Slurry showed the following dependences of temperature: pH decreased slightly; conductivity showed an increase of 1.88% per degree; the dispersion ability of abrasive particles was improved; the particle size of silica slurry decreased; removal rate significantly increased from 10-40 degrees C and was maintained constant beyond 40 degrees C. An increasing amount of hydroxyl (OH-) groups diffused into the TEOS, and weakened reactants, such as H-C-O-Si bonds on the surface of TEOS film, were actively generated with increasing slurry temperature, which could be removed easily.