Optical properties of indium oxide (In2O3) films prepared by activated reactive evaporation

被引：0
|
作者：
Benoy, MD [1 ]
Pradeep, B [1 ]
机构：
[1] Cochin Univ Sci & Technol, Dept Phys, Solid State Phys Lab, Cochin 682022, Kerala, India
来源：
INDIAN JOURNAL OF PURE & APPLIED PHYSICS | 1998年 / 36卷 / 11期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Good quality reproducible indium oxide (In2O3) films were prepared by activated reactive evaporation (ARE), on glass substrates at room temperature. The films are polycrystalline in nature. The optical properties of these films have been studied from 2.2 to 3.8 eV. It shows both direct and indirect allowed transitions with band gap 3.52 eV and 2.94 eV respectively.
引用
收藏
页码：686 / 689
页数：4
相关论文
共 50 条
  • [31] ON THE REACTIVE EVAPORATION OF IN AND IN2O3 IN AN O2 ENVIRONMENT
    WANG, QM
    FANG, PH
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1990, 137 (01) : 345 - 346
  • [32] Optical properties of In2O3 thin films prepared by rf helicon magnetron sputtering
    Miao, L.
    Tanemura, S.
    Cao, Y. G.
    Xu, G.
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 1, 2009, 6 : S123 - S126
  • [33] X-RAY-DIFFRACTION STUDIES OF BI2O3 FILMS PREPARED BY REACTIVE AND ACTIVATED REACTIVE EVAPORATION
    GEORGE, J
    PRADEEP, B
    JOSEPH, KS
    THIN SOLID FILMS, 1987, 148 (02) : 181 - 189
  • [34] Structure and Magnetic Properties of Fe doped In2O3 Thin Films Prepared by Electron Beam Evaporation
    Krishna, N. Sai
    Kaleemulla, S.
    Amarendra, G.
    Rao, N. Madhusudhana
    Krishnamoorthi, C.
    Begam, M. Rigana
    PROCEEDINGS OF THE 59TH DAE SOLID STATE PHYSICS SYMPOSIUM 2014 (SOLID STATE PHYSICS), 2015, 1665
  • [35] Indium doped silver oxide thin films prepared by reactive electron beam evaporation technique: electrical properties
    Subrahmanyam, Aryasomayajula
    Barik, Ullash Kumar
    JOURNAL OF MATERIALS SCIENCE, 2007, 42 (15) : 6041 - 6045
  • [36] Indium doped silver oxide thin films prepared by reactive electron beam evaporation technique: electrical properties
    Aryasomayajula Subrahmanyam
    Ullash Kumar Barik
    Journal of Materials Science, 2007, 42 : 6041 - 6045
  • [37] Optical and electrical properties of Sn-doped indium oxide films deposited on polyester by reactive evaporation
    Ma, Jin
    Zhang, Dehang
    Li, Shuying
    Zhao, Junqing
    Ma, Honglei
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1998, 37 (10): : 5614 - 5617
  • [38] Optical and electrical properties of Sn-doped indium oxide films deposited on polyester by reactive evaporation
    Ma, J
    Zhang, DH
    Li, SY
    Zhao, JQ
    Ma, HL
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (10): : 5614 - 5617
  • [39] Self Catalytic Growth of Indium Oxide (In2O3) Nanowires by Resistive Thermal Evaporation
    Kumar, R. Rakesh
    Rao, K. Narasimha
    Rajanna, K.
    Phani, A. R.
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2014, 14 (07) : 5485 - 5490
  • [40] Properties of Al2O3 Films Prepared by Reactive Evaporation at High Substrate Temperatures
    Zhi Chen
    真空科学与技术学报, 1992, (Z1) : 202 - 206
12345