Optical properties of indium oxide (In2O3) films prepared by activated reactive evaporation

被引：0
|
作者：
Benoy, MD [1 ]
Pradeep, B [1 ]
机构：
[1] Cochin Univ Sci & Technol, Dept Phys, Solid State Phys Lab, Cochin 682022, Kerala, India
来源：
INDIAN JOURNAL OF PURE & APPLIED PHYSICS | 1998年 / 36卷 / 11期
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D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Good quality reproducible indium oxide (In2O3) films were prepared by activated reactive evaporation (ARE), on glass substrates at room temperature. The films are polycrystalline in nature. The optical properties of these films have been studied from 2.2 to 3.8 eV. It shows both direct and indirect allowed transitions with band gap 3.52 eV and 2.94 eV respectively.
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页码：686 / 689
页数：4
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