Optical properties of indium oxide (In2O3) films prepared by activated reactive evaporation

被引：0

作者：

Benoy, MD ^{[1
]}

Pradeep, B ^{[1
]}

机构：

[1] Cochin Univ Sci & Technol, Dept Phys, Solid State Phys Lab, Cochin 682022, Kerala, India

来源：

INDIAN JOURNAL OF PURE & APPLIED PHYSICS | 1998年 / 36卷 / 11期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Good quality reproducible indium oxide (In2O3) films were prepared by activated reactive evaporation (ARE), on glass substrates at room temperature. The films are polycrystalline in nature. The optical properties of these films have been studied from 2.2 to 3.8 eV. It shows both direct and indirect allowed transitions with band gap 3.52 eV and 2.94 eV respectively.

引用

页码：686 / 689

页数：4

共 50 条

[1] Preparation and characterization of indium oxide (In2O3) films by activated reactive evaporation
M D Benoy
B Pradeep
Bulletin of Materials Science, 1997, 20 : 1029 - 1038
[2] Preparation and characterization of indium oxide (In2O3) films by activated reactive evaporation
Benoy, MD
Pradeep, B
BULLETIN OF MATERIALS SCIENCE, 1997, 20 (08) : 1029 - 1038
[3] Optical and electrical properties of In2O3: Mo films prepared by activated reactive evaporation technique
Kaleemulla, S.
Reddy, A. Sivasankar
Uthanna, S.
Reddy, P. Sreedhara
THERMOPHYSICAL PROPERTIES OF MATERIALS AND DEVICES, 2008, : 316 - +
[4] Effect of substrate temperature on the physical properties of In2O3:Mo films: Prepared by an activated reactive evaporation
Kaleemulla, S.
Reddy, A. Sivasankar
Uthanna, S.
Reddy, R. Sreedhara
VACUUM, 2009, 83 (06) : 970 - 975
[5] PROPERTIES OF INDIUM OXIDE-FILMS PREPARED BY THE REACTIVE EVAPORATION OF INDIUM
LASER, D
THIN SOLID FILMS, 1982, 90 (03) : 317 - 321
[6] ELECTRICAL-PROPERTIES OF UNDOPED IN2O3 FILMS PREPARED BY REACTIVE EVAPORATION
NOGUCHI, S
SAKATA, H
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1980, 13 (06) : 1129 - 1133
[7] Thickness dependence of the properties of indium tin oxide (ITO) FILMS prepared by activated reactive evaporation
Benoy, M. D.
Mohammed, E. M.
Suresh, Babu M.
Binu, P. J.
Pradeep, B.
BRAZILIAN JOURNAL OF PHYSICS, 2009, 39 (04) : 629 - 632
[8] ELECTRICAL AND OPTICAL-PROPERTIES OF IN2O3-SN FILMS PREPARED BY ACTIVATED REACTIVE EVAPORATION
NATH, P
BUNSHAH, RF
BASOL, BM
STAFFSUD, OM
THIN SOLID FILMS, 1980, 72 (03) : 463 - 468
[9] Stoichiometry and Properties of Undoped Indium Oxide Films Prepared by Reactive Evaporation
Kostishko, B. M.
Orlov, A. M.
Gonchar, L. I.
Inorganic Materials, 33 (08):
[10] Stoichiometry and properties of undoped indium oxide films prepared by reactive evaporation
Kostishko, BM
Orlov, AM
Gonchar, LI
INORGANIC MATERIALS, 1997, 33 (08) : 816 - 819

← 1 2 3 4 5 →