Photoelectric conversion characteristics of c-Se-based thin-film photodiodes in imaging device

Herein, we report the use of high-efficiency crystalline-selenium-based (c-Se-based) thin-film heterojunction photodiodes in imaging devices. As a novel experiment, we use an image pickup tube with a photoelectric conversion layer consisting of n-gallium oxide (Ga2O3)/p-c-Se heterojunction photodiodes to obtain high-resolution images at a relatively low applied voltage. We reduce the thickness of the Ga2O3 layer to expand the depletion layer into the c-Se layer at a lower applied voltage. In addition, Sn-doping of the Ga2O3 layer effectively increases the carrier concentration, thereby allowing the photodiode to operate at lower voltage.